Abstract: A method of predicting the electromagnetic noise emitted by a digital circuit on an integrated circuit is disclosed. In accordance with the illustrative embodiment, the output of each digital circuit element in the digital circuit is considered as a bit stream. All of these bits streams are, in aggregate, considered as a noise source that is characterized by a power spectral density, S(?). The effect of the noise source on an analog circuit can be modeled as a lumped circuit, wherein the lumped circuit contains a noise source that represents the digital circuit; a multi-port network, also referred to as a lumped element, that represents that portion of the substrate between the digital circuit and the analog circuit; and a multi-port network that represents the analog circuit.

Abstract: A method of predicting the electromagnetic noise emitted by a digital circuit on an integrated circuit is disclosed. In accordance with the illustrative embodiment, the output of each digital circuit element in the digital circuit is considered as a bit stream. All of these bits streams are, in aggregate, considered as a noise source that is characterized by a power spectral density, S(&ohgr;). The effect of the noise source on an analog circuit can be modeled as a lumped circuit, wherein the lumped circuit contains a noise source that represents the digital circuit; a multi-port network, also referred to as a lumped element, that represents that portion of the substrate between the digital circuit and the analog circuit; and a multi-port network that represents the analog circuit.

Abstract: An article for de-embedding parasitics and/or acting as an on-wafer calibration standard is disclosed. In particular, some articles in accordance with the present invention provide structures on integrated circuits that mitigate the severity of parasitics Furthermore, some articles in accordance with the present invention are well-suited for use with conductive substrates that operate at high frequencies. In an illustrative embodiment, conductive elements are used to construct structures near and/or around the leads on the integrated circuit. When the structures are grounded, the structures function to (at least) partially shield the leads to and from the DUT in a manner that is analogous to stripline, microstrip and coaxial cable. Because the electric fields emanating from the leads terminate in the grounded structure and not in the conductive substrate of the integrated circuit, the severity of the parasitics in the leads in mitigated.

Abstract: An integrated circuit is disclosed that comprises structures that confine, shield and/or manipulate the electric fields generated within the integrated circuit so as to improve the performance of the integrated circuit. Such structures include, but are not limited to, transmission lines, capacitors, inductors, filters, and couplers. Although embodiments of the present invention are advantageous for use on many integrated circuits, they are particularly well suited for use with integrated circuits that are disposed on conductive substrates and that operate at high frequencies.

Abstract: A method and apparatus for measuring electrical noise in devices is disclosed that comprises two distinct measurement phases. In one phase, the differential output resistance, r.sub.ab, between a first terminal, a, and a second terminal, b, of the device under test is measured. In the second phase, a voltage, V.sub.L (t), is measured across a load resistance, R.sub.L, that is in series with the first terminal, a, of the device under test. Then the output voltage noise spectral density, S.sub.VL, is determined based on a fourier transform of the voltage, V.sub.L (t); and the output current noise spectral density, S.sub.ia, is determined based on the output voltage noise spectral density, S.sub.VL, the load resistance, R.sub.L, and the differential output resistance, r.sub.ab.

Abstract: A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., >60 dB) and low noise (e.g., <2 nV/Hz.sup.-1/2) over a large frequency bandwidth (e.g., from 1 Hz to 1 MHz) and with a high input impedance (e.g., >10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources.

Abstract: The disclosed method of making a semiconductor device comprises a screening procedure that facilitates identification of devices having relatively low flicker noise. The devices are typically semiconductor diodes. The procedure utilizes our discovery of a correlation between the reverse bias current I.sub.r of a semiconductor device and the flicker noise power, and comprises measurement of the reverse bias current and comparison of the measured value with a predetermined comparison value I.sub.rc. Devices having I.sub.r .ltoreq.I.sub.rc are those that have relatively low flicker noise. The screening procedure is simple and quick, and can be readily performed in a manufacturing environment.