Abstract: A videoconferencing system uses a modular terminal that includes a conventional video camera or digital still camera coupled to the input port of the videocommunicator, such as a set top box. The camera includes a video input port and a display screen, and the videocommunicator is coupled to the video input port of the camera, whereby videoconference images are displayed on the camera display screen.

Abstract: A flash EPROM cell is fabricated using a standard two polysilicon enhancement mode n-channel transistor process. An active transistor region is formed in a silicon substrate by growing a field oxide around the region. A first polysilicon layer is deposited, etched, and oxidized to form an insulated control gate electrode. A second polysilicon layer is deposited over the active transistor region and the control gate electrode and then anisotropically etched to remove all of the second polysilicon material except for a filament adjacent to the control gate electrode. The filament can be on one side of the control gate electrode or on opposing sides of the control gate electrode. Source and drain regions are formed in the active transistor region with the control gate electrode and the floating gate electrode positioned over the channel region interconnecting the source and drain regions.

Abstract: A static random access memory array cell that is non-volatile because when power fails a floating gate is charged or not charged depending on the information content of the cell. When power is restored, all cells are written to a positive state except those with charged floating gates so that the information content of the array is recreated.

Abstract: A beam of radiant energy such as a laser beam is applied to an epitaxial silicon island on a silicon on sapphire device before formation of overlying layers of oxide and metal. The energy beam changes the crystal structure of the epitaxial silicon island to increase the mobility of carriers in the silicon island, improving the speed of transistors formed on the silicon island. The energy beam also causes the material in the silicon island edge to reflow, causing a reduction in the slope of the edge face of the silicon island edge, and a smoothing of the surface of the face, resulting in improved aluminum step coverage and elimination of a V-shaped groove in the first insulation layer at the bottom corner edge of the island, thereby increasing processing yield.