Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: A multi-platen chemical-mechanical polishing system is used to polish a wafer. The wafer is polished at a first station. During polishing, an endpoint is detected. The endpoint is detected by generating optical radiation by a first light source. The first optical radiation travels through a translucent area in a surface of a first platen and travels through a first polishing pad. After being reflected by the wafer, the optical radiation returns through the first polishing pad through the translucent window to a first optical radiation detector. The first polishing pad has a uniform surface in that no part of the surface of the first polishing pad includes transparent material through which non-scattered optical radiation originating from the first light source can pass and be detected by the first optical radiation detector. Optical radiation that travels through the first polishing pad and is detected by the first optical radiation detector is haze scattered by inclusions within the first polishing pad.

Abstract: The present invention is an ultrasonic transducer slurry dispensing device and method for efficiently distributing slurry. The present invention utilizes ultrasonic energy to facilitate efficient slurry application in a IC wafer fabrication process to permits reduced manufacturing times and slurry consumption during IC wafer fabrication. In one embodiment a chemical mechanical polishing (CMP) ultrasonic transducer slurry dispenser device includes a slurry dispensing slot, a slurry chamber coupled and an ultrasonic transducer. The slurry chamber receives the slurry and transports it to the slurry dispensing slots that apply slurry to a polishing pad. The ultrasonic transducer transmits ultrasonic energy to the slurry.

Abstract: A method for fabricating semiconductor devices that allows for the integration of anti-reflective coatings into the fabrication process. A method for removing an inorganic anti-reflective coating is disclosed that includes the step of exposing the layer of inorganic anti-reflective coating to atomic fluorine. An asher is used to generate fluorine atoms from NF.sub.3 precursor gas. The NF.sub.3 precursor gas is mixed with an inert carrier such as helium. In one embodiment, sequential etch steps are performed in an asher so as to sequentially remove both a layer of photoresist and a layer of inorganic anti-reflective coating.

Abstract: A method of making an inter-metal oxide layer over a patterned metallization layer of a substrate, and the resulting structure having the inter-metal oxide layer are provided. The method includes depositing a fluorine doped high density plasma (HDP) oxide layer over the patterned metallization layer. The fluorine doped HDP oxide layer is configured to evenly deposit in high aspect ratio regions of the patterned metallization layer. The method also includes depositing a plasma enhanced chemical vapor deposition (PECVD) oxide layer over the fluorine doped HDP oxide layer. The PECVD oxide layer is doped with a phosphorous material. A CMP operation is then performed over the PECVD oxide layer to remove topographical oxide variations, such that the CMP operation will be configured to preferably leave at least a coating of the PECVD oxide layer over the HDP oxide layer.