Patents by Inventor Samuel Z. Nawaz

Samuel Z. Nawaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6713361
    Abstract: According to one embodiment of the invention, a method for manufacturing bipolar junction transistors includes disposing a first oxide layer between a semiconductor substrate and a base polysilicon layer, forming a dielectric layer outwardly from the base polysilicon layer, and forming an emitter region by removing a portion of the dielectric layer and a portion of the base polysilicon layer. The method further includes removing a portion of the first oxide layer to form undercut regions adjacent the emitter region and to enlarge the emitter region, and forming an oxide pad outwardly from the semiconductor substrate in the emitter region.
    Type: Grant
    Filed: September 14, 2001
    Date of Patent: March 30, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Samuel Z. Nawaz, Jeffrey E. Brighton
  • Publication number: 20020039815
    Abstract: According to one embodiment of the invention, a method for manufacturing bipolar junction transistors includes disposing a first oxide layer between a semiconductor substrate and a base polysilicon layer, forming a dielectric layer outwardly from the base polysilicon layer, and forming an emitter region by removing a portion of the dielectric layer and a portion of the base polysilicon layer. The method further includes removing a portion of the first oxide layer to form undercut regions adjacent the emitter region and to enlarge the emitter region, and forming an oxide pad outwardly from the semiconductor substrate in the emitter region.
    Type: Application
    Filed: September 14, 2001
    Publication date: April 4, 2002
    Inventors: Samuel Z. Nawaz, Jeffrey E. Brighton