Abstract: A voltage reducing circuit comprises a power switch circuit portion comprising a high-side and low-side field-effect-transistors connected at a switch node. The power switch circuit portion has an on-state wherein the high-side transistor is enabled and the low-side transistor is disabled and, vice versa, an off-state. An energy storage circuit portion comprising an inductor connected to the switch node is arranged to provide an output voltage. A drive circuit portion receives a pulse width modulation control signal and outputs pulse width modulated (PWM) drive signals. A pre-biasing circuit portion applies bias voltages to the gate terminals of the high-side and low-side transistors in response to the PWM drive signals, wherein the pre-biasing circuit portion is arranged such that the bias voltage applied to the gate terminal of the currently disabled transistor is set to an intermediate voltage before switching between the on-state and off-state.

Abstract: A voltage reducing circuit includes a power switch circuit portion having high-side and low-side field-effect-transistors connected at a switch node. The power switch circuit portion has an on-state wherein the high-side transistor is enabled and the low-side transistor is disabled and, vice versa, an off-state. An energy storage circuit portion including an inductor connected to the switch node is arranged to provide an output voltage. A timer determines a falltime duration required for the output voltage to fall to a threshold value. A controller switches the voltage reducing circuit between a first mode of operation in which a periodic pulse width modulated drive signal is applied to the high-side and low-side field-effect-transistors; and a second mode of operation in which a pulse is applied to the high-side and low-side field-effect-transistors only if the output voltage reaches the threshold value.

Abstract: A voltage reducing circuit comprises a power switch circuit portion comprising a high-side and low-side field-effect-transistors connected at a switch node. The power switch circuit portion has an on-state wherein the high-side transistor is enabled and the low-side transistor is disabled and, vice versa, an off-state. An energy storage circuit portion comprising an inductor connected to the switch node is arranged to provide an output voltage. A timer determines a falltime duration required for the output voltage to fall to a threshold value. A controller switches the voltage reducing circuit between a first mode of operation in which a periodic pulse width modulated drive signal is applied to the high-side and low-side field-effect-transistors; and a second mode of operation in which a pulse is applied to the high-side and low-side field-effect-transistors only if the output voltage reaches the threshold value.

Abstract: A voltage reducing circuit comprises a power switch circuit portion comprising a high-side and low-side field-effect-transistors connected at a switch node. The power switch circuit portion has an on-state wherein the high-side transistor is enabled and the low-side transistor is disabled and, vice versa, an off-state. An energy storage circuit portion comprising an inductor connected to the switch node is arranged to provide an output voltage. A drive circuit portion receives a pulse width modulation control signal and outputs pulse width modulated (PWM) drive signals. A pre-biasing circuit portion applies bias voltages to the gate terminals of the high-side and low-side transistors in response to the PWM drive signals, wherein the pre-biasing circuit portion is arranged such that the bias voltage applied to the gate terminal of the currently disabled transistor is set to an intermediate voltage before switching between the on-state and off-state.