Patents by Inventor Samy Boukari

Samy Boukari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9379317
    Abstract: Method of filtering electrons to obtain spin-polarization of a current conducting at least 75% of electrons at the Fermi level, used with a spin-polarized current source comprising: a polarized spin injection device comprising an electrically conducting substrate of which a first face has magnetic properties and an organic layer in contact with the first face of the substrate; an electrically conducting material called the ground, the organic layer being arranged between the ground and the substrate; a current source electrically connected to the first face of the substrate and the ground; the method comprising circulation of the electron conduction current by means of the current source, between the first face of the substrate and the ground, at a temperature higher than ?220° C.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: June 28, 2016
    Assignees: Centre National de la Recherche Scientifique, Universite de Strasbourg
    Inventors: Martin Bowen, Wolfgang Weber, Loïc Joly, Eric Beaurepaire, Fabrice Scheurer, Samy Boukari, Mébarek Alouani
  • Patent number: 9362488
    Abstract: A method for manufacturing a spin injector device, comprising the following steps of: a) forming a metal protection layer on a face of a substrate, so as to restrict or prevent oxidation and/or contamination of said face by its environment, the face being magnetic and electrically conductive, the protection layer being of a diamagnetic or paramagnetic nature; b) forming an upper layer onto the protection layer, able to promote a spin bias of electronics sates in the vicinity of the Fermi level of the interface between the protection layer and the upper layer according to an amplitude and a spin referential frame which are defined by the magnetism of the substrate and/or of the face of the substrate, the upper layer being an organic layer of which one or more molecular sites have, in contact with the protection layer, a paramagnetic moment.
    Type: Grant
    Filed: April 15, 2013
    Date of Patent: June 7, 2016
    Assignees: Centre National de la Recherche Scientifique, Universite de Strasbourg
    Inventors: Martin Bowen, Mébarek Alouani, Samy Boukari, Eric Beaurepaire, Wolfgang Weber, Fabrice Scheurer, Loïc Joly
  • Publication number: 20150129994
    Abstract: Method of filtering electrons to obtain spin-polarisation of a current conducting at least 75% of electrons at the Fermi level, used with a spin-polarised current source comprising: a polarised spin injection device comprising an electrically conducting substrate of which a first face has magnetic properties and an organic layer in contact with the first face of the substrate; an electrically conducting material called the ground, the organic layer being arranged between the ground and the substrate; a current source electrically connected to the first face of the substrate and the ground; the method comprising circulation of the electron conduction current by means of the current source, between the first face of the substrate and the ground, at a temperature higher than ?220° C.
    Type: Application
    Filed: April 15, 2013
    Publication date: May 14, 2015
    Inventors: Martin Bowen, Wolfgang Weber, Loïc Joly, Eric Beaurepaire, Fabrice Scheurer, Samy Boukari, Mébarek Alouani
  • Publication number: 20150072442
    Abstract: A method for manufacturing a spin injector device, comprising the following steps of: a) forming a metal protection layer on a face of a substrate, so as to restrict or prevent oxidation and/or contamination of said face by its environment, the face being magnetic and electrically conductive, the protection layer being of a diamagnetic or paramagnetic nature; b) forming an upper layer onto the protection layer, able to promote a spin bias of electronics sates in the vicinity of the Fermi level of the interface between the protection layer and the upper layer according to an amplitude and a spin referential frame which are defined by the magnetism of the substrate and/or of the face of the substrate, the upper layer being an organic layer of which one or more molecular sites have, in contact with the protection layer, a paramagnetic moment.
    Type: Application
    Filed: April 15, 2013
    Publication date: March 12, 2015
    Applicants: UNIVERSITE DE STRASBOURG, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Martin Bowen, Mébarek Alouani, Samy Boukari, Eric Beaurepaire, Wolfgang Weber, Fabrice Scheurer, Loïc Joly