Patents by Inventor San-De Tzu
San-De Tzu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7445159Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.Type: GrantFiled: February 13, 2006Date of Patent: November 4, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chana
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Patent number: 7434194Abstract: The present method for designing a mask includes calculating the maximum layout number of patterns on a mask substrate, calculating a first mask cost and a second mask cost, calculating the total cost for fabricating a predetermined number of wafers using the first mask and the second mask, and selecting a lower total cost to design the pattern number on a mask substrate. Preferably, the pattern number on the first mask is equal to the maximum layout number, and the pattern number on the second mask is smaller than the maximum layout number. The present mask includes a mask substrate, a first pattern positioned on a first portion of the mask substrate for defining the shape of a first layer on a wafer, and a second pattern positioned on a second portion of the mask substrate for defining the shape of a second layer on the wafer.Type: GrantFiled: July 22, 2005Date of Patent: October 7, 2008Assignee: Remarkable LimitedInventor: San De Tzu
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Publication number: 20070190793Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.Type: ApplicationFiled: February 13, 2006Publication date: August 16, 2007Inventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chana
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Patent number: 7033947Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.Type: GrantFiled: March 11, 2003Date of Patent: April 25, 2006Assignee: Taiwan Seminconductor Manufacturing Co LtdInventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chang
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Patent number: 6872507Abstract: A method for forming a patterned microelectronics layer employing electron beam lithography in a sensitive material upon a substrate with optimal correction for proximity effects resulting from electron back scattering into the resist material. There is provided a substrate having formed thereon a layer of resist material sensitive to electron beam exposure. There is then exposed the sensitive layer to a vector scan shaped electron beam to write a primary pattern with dose correction of the beam dose for proximity effects due to electron scattering at each point in the primary pattern. There is then written a secondary pattern which is a negative reversed image of the primary pattern in a secondary exposure employing a vector scan shaped focused electron beam at an exposure dose substantially below the primary beam dose, there being provided a gap between the primary pattern and the secondary pattern.Type: GrantFiled: November 1, 2002Date of Patent: March 29, 2005Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Ching Shiun Chiu, Wei-Zen Chou, Chia Fang Wu
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Patent number: 6830702Abstract: The invention relates to fabricating a single-trench alternating phase shift mask (PSM). A chromium layer over a mask layer, which is itself over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer and the quartz layer are dry etched through a photoresist layer that has been applied over the chromium layer and patterned according to an alternating PSM design. The dry etching initially forms single trenches of the PSM. The quartz layer is next wet etched through the mask layer to completely form the single trenches of the PSM, where the photoresist layer has first been removed. The mask layer is dry etched again, where the single trenches of the PSM are initially filled with filler material to protect the single trenches from the dry etching.Type: GrantFiled: June 7, 2002Date of Patent: December 14, 2004Assignee: Taiwan Semiconductor Manufacturing Co. LtdInventors: San-De Tzu, Chang-Ming Dai, Chung-Hsing Chang, Chen-Hao Hsieh
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Patent number: 6830853Abstract: A method of forming photomasks is described which provides good critical dimension control for critical pattern elements and provides good throughput and low defect levels for etching relatively large areas of opaque material. The pattern is first modified to form a frame around the pattern elements which require good critical dimension control. The opaque material, such as chrome, in this frame is then etched away using dry anisotropic etching. The dry anisotropic etching provides good critical dimension control. The remainder of the opaque material to be removed is then etched away using wet isotropic etching. The wet isotropic etching provides good defect control in this region of the mask and good throughput. This method provides good critical dimension control at the edges of the pattern elements, good throughput in mask fabrication, and good defect level control in removing the relatively large areas of opaque material which do not affect critical dimension control.Type: GrantFiled: August 7, 2002Date of Patent: December 14, 2004Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Sheng-Chi Chin, Chung-Hsing Chang, Hsin-Chang Li
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Publication number: 20040180548Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.Type: ApplicationFiled: March 11, 2003Publication date: September 16, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: San-De Tzu, Ming-Shuo Yen, Chung-Hsing Chang
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Publication number: 20040086786Abstract: A method for forming a patterned microelectronics layer employing electron beam lithography in a sensitive material upon a substrate with optimal correction for proximity effects resulting from electron back scattering into the resist material. There is provided a substrate having formed thereon a layer of resist material sensitive to electron beam exposure. There is then exposed the sensitive layer to a vector scan shaped electron beam to write a primary pattern with dose correction of the beam dose for proximity effects due to electron scattering at each point in the primary pattern There is then written a secondary pattern which is a negative reversed image of the primary pattern in a secondary exposure employing a vector scan shaped focused electron beam at an exposure dose substantially below the primary beam dose, there being provided a gap between the primary pattern and the secondary pattern.Type: ApplicationFiled: November 1, 2002Publication date: May 6, 2004Applicant: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Ching Shiun Chiu, Wei-Zen Chou, Chia Fang Wu
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Patent number: 6720116Abstract: A method for forming a photomask and pellicle suitable for use in photolithography with incident electromagnetic radiation in a wavelength range from above 250 nm to below 150 nm. The opaque regions of the photomask are formed directly within a transparent F-doped quartz layer by either gallium ion staining using a focused ion beam (FIB) or by deposition of carbon atoms within trenches formed in the transparent layer, said carbon atom deposition being a result of the interaction of a FIB with styrene molecules. An alignment boundary formed on the resulting mask allows a hard pellicle to be fit directly over it so as to avoid warping.Type: GrantFiled: January 9, 2003Date of Patent: April 13, 2004Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Anthony Yen, Chung Hsing Chang, Chen-Hao Hsieh
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Publication number: 20030226819Abstract: The invention relates to fabricating a single-trench alternating phase shift mask (PSM). A chromium layer over a mask layer, which is itself over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer and the quartz layer are dry etched through a photoresist layer that has been applied over the chromium layer and patterned according to an alternating PSM design. The dry etching initially forms single trenches of the PSM. The quartz layer is next wet etched through the mask layer to completely form the single trenches of the PSM, where the photoresist layer has first been removed. The mask layer is dry etched again, where the single trenches of the PSM are initially filled with filler material to protect the single trenches from the dry etching.Type: ApplicationFiled: June 7, 2002Publication date: December 11, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: San-De Tzu, Chang-Ming Dai, Chung-Hsing Chang, Chen-Hao Hsieh
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Patent number: 6660653Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a quartz layer of the PSM is patterned according to a semiconductor design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the alternating PSM design by using beam writing. This initially forms deep trenches of the PSM. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the deep trenches and the shallow trenches of the alternating PSM design by using backside ultraviolet exposure. This completely forms shallow trenches and the deep trenches of the PSM. The second photoresist layer is then removed.Type: GrantFiled: May 21, 2002Date of Patent: December 9, 2003Assignee: Taiwan Semiconductor Manufacturing Co. LtdInventors: San-De Tzu, Chang-Ming Dai, Ching-Hsing Chang
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Publication number: 20030219990Abstract: Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a quartz layer of the PSM is patterned according to a semiconductor design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the alternating PSM design by using beam writing. This initially forms deep trenches of the PSM. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the deep trenches and the shallow trenches of the alternating PSM design by using backside ultraviolet exposure. This completely forms shallow trenches and the deep trenches of the PSM. The second photoresist layer is then removed.Type: ApplicationFiled: May 21, 2002Publication date: November 27, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: San-De Tzu, Chang-Ming Dai, Ching-Hsing Chang
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Patent number: 6632590Abstract: A new method is provided for the creation of densely patterned interconnect lines. As a first step of the invention, the mask layout is modified such that the ratio of line width (L) to line spacing (S) is sharply decreased. The line pattern that is created using this mask reflects the same sharp reduction in the ratio L/S. The width of the thus created lines is, as a second step of the invention, increased by the process of thermal flow while the spacing between the lines is concurrently decreased by the same amount.Type: GrantFiled: July 14, 2000Date of Patent: October 14, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Tsung-Hou Lee, Chih-Hsiung Lee, Gwo Yuh Shiau, Ching-sen Kuo
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Patent number: 6630408Abstract: A new method is provided for the creation of an attenuated phase shifting mask. A transparent mask substrate is provided, a layer of attenuating phase shifting material is deposited on the surface of said transparent mask substrate, a layer of opaque material is deposited on the surface of said layer of attenuating phase shifting material. A layer of photoresist is deposited over the surface of the layer of opaque material. The photoresist is exposed by E-beam, creating a mask pattern and a guard ring pattern in the photoresist. The (E-beam) exposed photoresist is removed, the pattern created in the layer of photoresist is used to etch a mask pattern in the layer of opaque material and the layer of attenuating phase shifting material. The remaining photoresist is exposed to UV radiation in the region of the mask pattern and partially in the region of the guard ring.Type: GrantFiled: September 4, 2001Date of Patent: October 7, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Ching-Chia Lin
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Patent number: 6631307Abstract: A method is described which allows certain Optical Proximity Corrections to be computed in a few minutes. This has been achieved by limiting changes to the optical mask to the addition of two sets of serifs (one larger than the other) at the appropriate vertices in the layout mask. A key feature of the method is that identification of which serifs will be within a critical distance from a neighbouring edge (and have therefore to be smaller) is performed by the application of a few simple logical operations. This results in a corrected mask that can be generated in a few minutes, as opposed to many hours.Type: GrantFiled: March 19, 1998Date of Patent: October 7, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Yi-Hsu Chen
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Patent number: 6495297Abstract: A mask and method of forming a mask for forming electrode patterns having both closely spaced lines and lines with greater separation between them. The mask uses a pattern formed using attenuating phase shifting material for the region of the mask with lines with greater separation and a binary pattern formed using opaque material in the region of the mask with closely spaced lines. The mask design data is used to determine the mask regions using attenuating phase shifting material and the regions of the mask using a binary pattern. The mask is illuminated using off axis illumination, preferably quadrapole off axis illumination. The mask is formed using electron beam exposure of a resist using more than one exposure dose so that only one layer of resist is required to form the two regions of the mask one using attenuating phase shifting material and one using a binary pattern.Type: GrantFiled: September 21, 2000Date of Patent: December 17, 2002Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chih-Chiang Tu, San-De Tzu
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Patent number: 6432588Abstract: A method of fabricating an attenuating phase-shifting photomask, comprising the following steps. A photomask blank is provided having an upper resist layer overlying a chromium layer, the chromium layer overlying a phase-shifting layer, and the phase-shifting layer over a substrate. The photomask blank having a low pattern density area with a pattern density less than 0.25, a middle pattern density area with a pattern density from about 0.25 to 0.70, and a high pattern density area with a pattern density between about 0.70 and 1.00. The photomask blank is exposed to a first E-beam energy in a single step wherein the low pattern density area is exposed to the first E-beam energy adjusted by a first dosage factor, the middle pattern density area is exposed to the first E-beam energy adjusted by a second dosage factor, and the high pattern density area is exposed to the first E-beam energy adjusted by a third dosage factor.Type: GrantFiled: December 4, 2000Date of Patent: August 13, 2002Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Ching-Shiun Chiu
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Publication number: 20020102468Abstract: A method of fabricating an attenuating phase-shifting photomask, comprising the following steps. A photomask blank is provided having an upper resist layer overlying a chromium layer, the chromium layer overlying a phase-shifting layer, and the phase-shifting layer over a substrate. The photomask blank having a low pattern density area with a pattern density less than 0.25, a middle pattern density area with a pattern density from about 0.25 to 0.70, and a high pattern density area with a pattern density between about 0.70 and 1.00. The photomask blank is exposed to a first E-beam energy in a single step wherein the low pattern density area is exposed to the first E-beam energy adjusted by a first dosage factor, the middle pattern density area is exposed to the first E-beam energy adjusted by a second dosage factor, and the high pattern density area is exposed to the first E-beam energy adjusted by a third dosage factor.Type: ApplicationFiled: December 4, 2000Publication date: August 1, 2002Applicant: Taiwan Semiconductor Manufacturing CompanyInventors: San-De Tzu, Ching-Shiun Chiu
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Patent number: 6423455Abstract: Within a method for fabricating a photomask there is first provided a transparent substrate having formed thereover a blanket first masking layer, in turn having formed thereover a blanket second masking layer, in turn having formed thereover a patterned photoresist layer having an active patterned region and a border region adjoining the active patterned region. There is then etched, while employing a first etch method and while employing the patterned photoresist layer as a first etch mask layer, the blanket second masking layer and the blanket first masking layer to form a patterned second masking layer and a patterned first masking layer.Type: GrantFiled: June 1, 2000Date of Patent: July 23, 2002Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: San-De Tzu