Abstract: The present invention relates to a novel exenatide analogue, which is an exenatide analogue in which the first to fifteenth amino acids from the C-terminal of the amino acid sequence of exenatide are deleted and a fatty acid is conjugated. The present invention provides a short length exenatide exhibiting almost the same level of anti-diabetic effects compared with that of conventional exenatide and liraglutide, which is an anti-diabetic drug, and capable of reducing the preparation cost of exenatide.

Abstract: A breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as active ingredient has been disclosed. Further, a breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as cyclin-dependent kinase (CDK) inhibitor, wherein said breast cancer is triple negative breast cancer (TNBC) and/or an estrogen receptor (ER) positive breast cancer including the tamoxifen-resistant estrogen receptor (ER) positive breast cancer has been disclosed.

Abstract: A breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as active ingredient has been disclosed. Further, a breast cancer therapeutic agent containing 5?-hydroxy-5-nitro-indirubin-3?-oxime as cyclin-dependent kinase (CDK) inhibitor, wherein said breast cancer is triple negative breast cancer (TNBC) and/or an estrogen receptor (ER) positive breast cancer including the tamoxifen-resistant estrogen receptor (ER) positive breast cancer has been disclosed.

Abstract: The present invention relates to a novel exenatide analogue, which is an exenatide analogue in which the first to fifteenth amino acids from the C-terminal of the amino acid sequence of exenatide are deleted and a fatty acid is conjugated. The present invention provides a short length exenatide exhibiting almost the same level of anti-diabetic effects compared with that of conventional exenatide and liraglutide, which is an anti-diabetic drug, and capable of reducing the preparation cost of exenatide.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.

Abstract: A method for fabricating a poly-silicon liquid crystal display device includes forming a poly-silicon layer including a TFT region and a storage capacitor region on a substrate, wherein the capacitor region includes an impurity injection region having a N-type impurity injection region and a P-type impurity injection region; forming a gate electrode and a storage capacitor electrode on the poly-silicon layer; injecting an N-type impurity ion with a high doping density into the N-type impurity injection region and the TFT region; injecting a P-type impurity ion with a high doping density into the P-type impurity injection region; forming an insulating layer on the gate electrode and the storage electrode; and forming a pixel electrode on the insulating layer, wherein the pixel electrode is electrically connected to the impurity injection region in the storage capacitor region.