Patents by Inventor Sanae Asari

Sanae Asari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device
    Patent number: 7982314
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: July 19, 2011
    Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Publication number: 20100308458
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Application
    Filed: July 21, 2010
    Publication date: December 9, 2010
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Patent number: 7808107
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: October 5, 2010
    Assignees: Renesas Electronics Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Publication number: 20090219069
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Application
    Filed: May 8, 2009
    Publication date: September 3, 2009
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Patent number: 7547971
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: June 16, 2009
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Publication number: 20060006480
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Application
    Filed: August 12, 2005
    Publication date: January 12, 2006
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Patent number: 6963136
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Grant
    Filed: December 17, 2001
    Date of Patent: November 8, 2005
    Assignees: Renesas Technology Corporation, Hitachi ULSI Systems Co., Ltd.
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato
  • Semiconductor integrated circuit device
    Publication number: 20040007778
    Abstract: Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
    Type: Application
    Filed: June 19, 2003
    Publication date: January 15, 2004
    Inventors: Masao Shinozaki, Kenji Nishimoto, Takashi Akioka, Yutaka Kohara, Sanae Asari, Shusaku Miyata, Shinji Nakazato