Abstract: A wet treatment method useful in one of a chemical processing and a rinsing step performed upon fabrication of semiconductor devices. A substrate is treated with a desired liquid while revolving the substrate around an axis of rotation outside the substrate such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying the liquid at a flow rate at least equal to a discharge rate of the liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force. The substrate surface is evenly treated with the liquid while avoiding flows of the liquid running against each other or a flow of the liquid stagnating on the surface of the substrate.

Abstract: A wet treatment method useful in at least one of a chemical processing step and a rinsing step performed upon fabrication of semiconductor devices is disclosed. According to this method, a substrate under treatment is treated with a desired liquid while causing the substrate to revolve around an axis of rotation outside the substrate itself instead of allowing the substrate to rotate about the axis of rotation such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying a fresh liquid of the same kind as the desired liquid at a flow rate at least equal to a discharge rate of the desired liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force.