Abstract: Provided is a polishing composition capable of speeding up a mirror polishing in terms of polishing rate and the like, improving the smoothness and the flatness of a wafer surface of a semiconductor wafer after the mirror polishing, enabling mirror finishing with high processing accuracy, and having excellent storage stability. The polishing composition is for polishing a polishing target including a group III-V compound as a constituent component, and includes colloidal silica, an oxidizing agent, an oxidation accelerator for accelerating the oxidation reaction on the surface of the polishing target by the oxidizing agent, a stabilizer for controlling the accelerating action of the oxidation reaction on the surface of the polishing target by the oxidation accelerator, and water.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A target surface of a tape-shaped substrate of an oxide superconductor with an intermediate layer formed on this target surface and an oxide superconductor thin film is polished by causing the tape-shaped substrate to continuously run. The polishing step includes an initial polishing process for carrying out random polishing of the target surface and a finishing process that is carried out after the initial polishing process for forming grooves on the target surface along the running direction of the substrate. The intermediate layer has an in-plane directionality of 7° or less. The tape-shaped substrate is fabricated by rolling nickel, a nickel alloys or stainless steel.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation ?? is 5° or less.

Abstract: An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step.

Abstract: A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing.

Abstract: A target surface of a tape-shaped substrate of an oxide superconductor with an intermediate layer formed on this target surface and an oxide superconductor thin film is polished by causing the tape-shaped substrate to continuously run. The polishing step includes an initial polishing process for carrying out random polishing of the target surface and a finishing process that is carried out after the initial polishing process for forming grooves on the target surface along the running direction of the substrate. The intermediate layer has an in-plane directionality of 7° or less. The tape-shaped substrate is fabricated by rolling nickel, a nickel alloys or stainless steel.

Abstract: Polishing slurry is caused to be present between a surface of a soft magnetic layer and a polishing tool such as a polishing pad and the surface of the soft magnetic layer and the polishing tool are moved relative to each other. The polishing slurry contains silica particles as abrading particles, compounds containing carboxylic acid and amino polycarboxylic acid and an oxidizing agent as a polishing accelerator, organic and/or inorganic compound of phosphoric acid, nitride and/or nitrite as an anti-corrosion agent and a pH conditioner such that the slurry has pH value between 4 and 11.