Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

Abstract: A chemical vapor deposition process for depositing a tungsten film on a substrate disposed in a substrate processing. The method includes depositing nucleation and bulk deposition tungsten layers. The nucleation layer is deposited by flowing a first process gas comprising tungsten hexafluoride, silane, molecular hydrogen and argon into said substrate processing chamber, where the flow ratio of molecular hydrogen to argon is at least 1.5:1 and the partial pressure of tungsten hexafluoride is less than or equal to 0.5 Torr. The bulk deposition layer is then deposited over the nucleation layer by flowing a second process gas comprising tungsten hexafluoride and a reduction agent into the substrate processing chamber.

Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. A layer of silicon is deposited on the walls of an opening. In one aspect, the opening is filled by depositing electrically conductive material directly over the silicon. In another aspect, the layer of silicon is exposed to a precursor gas that reacts with the silicon so as to (a) form a volatile material that consumes substantially all of the silicon and (b) deposit an electrically conductive material within the opening.