Abstract: Anti-PVRIG and anti-TIGIT antibodies are provided.

Abstract: Anti-PVRIG and anti-TIGIT antibodies are provided.

Abstract: In an embodiment, a computer-based method for automatically selecting resources to include in a building plan layout is disclosed. The method involves obtaining a set of resource rules that define resources placeable within a building plan layout, obtaining a set of behavioral rules that define the behaviors of the resources, generating a model by evaluating the set of resource rules and the set of behavioral rules, obtaining a configuration, wherein a configuration comprises at least one of building demand, resource permutations, and other simulation attributes, generating at least one set of performance metrics by executing the model with the configuration, storing the at least one set of performance metrics, the model, and the configuration as an entry in a metrics database, selecting an entry from the metrics database, and outputting the entry to a building plan layout generator.

Abstract: In accordance with an embodiment of the invention, a discrete event simulator is disclosed. In an embodiment, the discrete event simulator includes a model having at least one activity instance, wherein the at least one activity has an activity type that defines a participating entity type list and a duration of time over which the activity instance will be performed, at least one activity queue, wherein the at least one activity queue is configured to hold the at least one activity instance in an order, and at least one entity, wherein the at least one entity is associated with at least one behavior and is configured to join at least one activity instance, and a configuration, wherein the configuration further defines the at least one entity, wherein the at least one entity is configured to perform the at least one associated behavior when, upon joining the at least one activity instance, an entity for each type in the participating entity type list of the activity instance has joined the activity instance.

Abstract: In an embodiment, a computer-based method for automatically selecting resources to include in a building plan layout is disclosed. The method involves obtaining a set of resource rules that define resources placeable within a building plan layout, obtaining a set of behavioral rules that define the behaviors of the resources, generating a model by evaluating the set of resource rules and the set of behavioral rules, obtaining a configuration, wherein a configuration comprises at least one of building demand, resource permutations, and other simulation attributes, generating at least one set of performance metrics by executing the model with the configuration, storing the at least one set of performance metrics, the model, and the configuration as an entry in a metrics database, selecting an entry from the metrics database, and outputting the entry to a building plan layout generator.

Abstract: Provided is a method and system for auction trading which enables transactions to be time shifted. A first sale transaction of a first participant selling to a second participant for a first price is processed. A second sale transaction of the second participant selling to a third participant for a second price is processed. If the second price is greater than the first price, a portion of the second price corresponding to the first price is paid to the first participant and the remainder of the second price is paid to the second participant. Otherwise, the second price is paid to the first participant.

Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

Abstract: A chemical vapor deposition process for depositing a tungsten film on a substrate disposed in a substrate processing. The method includes depositing nucleation and bulk deposition tungsten layers. The nucleation layer is deposited by flowing a first process gas comprising tungsten hexafluoride, silane, molecular hydrogen and argon into said substrate processing chamber, where the flow ratio of molecular hydrogen to argon is at least 1.5:1 and the partial pressure of tungsten hexafluoride is less than or equal to 0.5 Torr. The bulk deposition layer is then deposited over the nucleation layer by flowing a second process gas comprising tungsten hexafluoride and a reduction agent into the substrate processing chamber.

Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

Abstract: A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. A layer of silicon is deposited on the walls of an opening. In one aspect, the opening is filled by depositing electrically conductive material directly over the silicon. In another aspect, the layer of silicon is exposed to a precursor gas that reacts with the silicon so as to (a) form a volatile material that consumes substantially all of the silicon and (b) deposit an electrically conductive material within the opening.