Patents by Inventor Sandip Gangadharrao Lashkare

Sandip Gangadharrao Lashkare has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating neuron oscillator including thermal insulating device
    Patent number: 11323065
    Abstract: Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: May 3, 2022
    Assignee: INDIAN INSTITUTE OF TECHNOLOGY BOMBAY
    Inventors: Sandip Gangadharrao Lashkare, Vivek Saraswat, Pankaj Subhash Kumbhare, Udayan Ganguly
  • METHOD FOR FABRICATING NEURON OSCILLATOR INCLUDING THERMAL INSULATING DEVICE
    Publication number: 20210242831
    Abstract: Accordingly the embodiments herein provide a method for fabricating a neuron oscillator (200a). The neuron oscillator (200a) includes a thermal insulating device connected with a resistor and a capacitor in series to produce self-sustained oscillations, where the resistor and the capacitor are arranged in parallel manner. The neuron oscillator (200a) eliminates a requirement of an additional compensation circuitry for a consistent performance over a time under heating issues. Additionally, an ON/OFF ratio of the neuron oscillator (200a) improves to a broader resistor range. Further, a presence of tunable synaptic memristor functionality of the neuron oscillator (200a) provides a reduced fabrication complexity to a large scale ONN. An input voltage required for the neuron oscillator (200a) is low (2-3 V) which makes it suitable to use with existing circuitries without using any additional converters.
    Type: Application
    Filed: May 28, 2019
    Publication date: August 5, 2021
    Inventors: Sandip Gangadharrao Lashkare, Vivek Saraswat, Pankaj Subhash Kumbhare, Udayan Ganguly