Patents by Inventor Sandip Niyogi
Sandip Niyogi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240304422Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, a plasma processing method includes introducing a gas including helium and nitrogen into a gas injection channel of a plasma source. The method includes generating a plasma within the gas injection channel. The plasma includes helium radicals and nitrogen radicals. The method includes delivering the plasma from the plasma source to a process chamber including a substrate. The method includes producing a treated substrate by processing the substrate with the plasma within the process chamber, in which processing the substrate includes contacting the plasma including the helium radicals and nitrogen radicals with a first side of the substrate.Type: ApplicationFiled: May 20, 2024Publication date: September 12, 2024Inventors: Sandip NIYOGI, Wei LIU, Dileep Venkata Sai VADLADI, Lily HUANG
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Publication number: 20170117282Abstract: Embodiments provided herein describe capacitor stacks and methods for forming capacitor stacks. A first electrode is formed above a substrate. A dielectric layer is formed above the first electrode. The dielectric layer includes zirconium. A second electrode is formed above the dielectric layer. At least one of the first electrode and the second electrode includes iridium.Type: ApplicationFiled: October 25, 2016Publication date: April 27, 2017Applicant: Intermolecular, Inc.Inventors: Monica S. Mathur, Randall Higuchi, Thong Quang Ngo, Sandip Niyogi, Prashant Phatak
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Publication number: 20160181091Abstract: Embodiments provided herein describe systems and methods for forming ferroelectric materials. A trench body may be provided. A trench may be formed in the trench body. A dielectric material and a filler material may be deposited within the trench. The filler material may be heated such that a stress is exerted on the dielectric material before the dielectric material is heated to generate a ferroelectric phase within the dielectric material. A non-contiguous layer may be formed above a substrate. A second layer including a high-k dielectric material may be formed above the first layer. The high-k dielectric material may be heated to generate a ferroelectric phase within the high-k dielectric material.Type: ApplicationFiled: December 19, 2014Publication date: June 23, 2016Inventors: Sandip Niyogi, Sergey Barabash, Federico Nardi, Dipankar Pramanik
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Patent number: 9266738Abstract: A method of modifying a carbon material is disclosed. The method comprises: bonding a metal to a carbon material to form a metal-carbon complex comprising the metal and a benzene unit, wherein the carbon material comprises extended sp2-bonded carbon atoms.Type: GrantFiled: October 14, 2011Date of Patent: February 23, 2016Assignee: The Regents of the University of CaliforniaInventors: Robert C. Haddon, Santanu Sarkar, Sandip Niyogi, Elena Bekyarova, Mikhail E. Itkis, Xiaojuan Tian, Feihu Wang
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Patent number: 9224644Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.Type: GrantFiled: December 26, 2012Date of Patent: December 29, 2015Assignee: Intermolecular, Inc.Inventors: Sandip Niyogi, Amol Joshi, Chi-I Lang, Salil Mujumdar
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Patent number: 9099488Abstract: Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. Surface treatments can be inserted at three possible steps during the formation of the MOSCAP structures. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.Type: GrantFiled: December 19, 2013Date of Patent: August 4, 2015Assignee: Intermolecular, Inc.Inventors: Sandip Niyogi, Dipankar Pramanik
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Publication number: 20150179757Abstract: Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. Surface treatments can be inserted at three possible steps during the formation of the MOSCAP structures. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.Type: ApplicationFiled: December 19, 2013Publication date: June 25, 2015Applicant: Intermoleular, Inc.Inventors: Sandip Niyogi, Dipankar Pramanik
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Publication number: 20150179743Abstract: In some embodiments, a “channel last” device architecture is implemented wherein an amorphous carbon layer is formed between the channel and the source and drain layers. Subsequent heating of the structure allows the metal materials in the source and drain layers to convert the amorphous carbon materials into graphene. This forms an ohmic contact between the source and drain layers and the channel layers and lowers the contact resistance.Type: ApplicationFiled: December 19, 2013Publication date: June 25, 2015Applicant: Intermolecular, Inc.Inventor: Sandip Niyogi
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Publication number: 20150140836Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. Methods are disclosed that discuss the use of blocking species that bind to the surface of the dielectric and retard the etching of the dielectric surface by a doping/passivating species. The surface of the dielectric may be exposed to the blocking species a plurality of times during the process to ensure that the surface is well protected.Type: ApplicationFiled: November 18, 2013Publication date: May 21, 2015Applicant: Intermolecular, Inc.Inventor: Sandip Niyogi
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Patent number: 8987143Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.Type: GrantFiled: September 19, 2013Date of Patent: March 24, 2015Assignee: Intermolecular, Inc.Inventors: Ratsamee Limdulpaiboon, Chi-I Lang, Sandip Niyogi, J. Watanabe
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Publication number: 20150021772Abstract: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 ? thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets.Type: ApplicationFiled: July 16, 2013Publication date: January 22, 2015Inventors: Edwin Adhiprakasha, Sandip Niyogi, Karthik Ramani, Vivian Ryan
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Patent number: 8927415Abstract: Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.Type: GrantFiled: December 19, 2013Date of Patent: January 6, 2015Assignee: Intermolecular, Inc.Inventors: Sandip Niyogi, Chi-l Lang
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Patent number: 8901677Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.Type: GrantFiled: March 5, 2014Date of Patent: December 2, 2014Assignee: Intermolecular, Inc.Inventors: Frank Greer, Edwin Adhiprakasha, Chi-I Lang, Ratsamee Limdulpaiboon, Sandip Niyogi, Kurt Pang, J. Watanabe
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Publication number: 20140315331Abstract: Candidate wet processes for native oxide removal from, and passivation of, germanium surfaces can be screened by high-productivity combinatorial variation of different process parameters on different site-isolated regions of a single substrate. Variable process parameters include the choice of hydrohalic acid used to remove the native oxide, the concentration of the acid in the solution, the exposure time, and the use of an optional sulfur passivation step. Measurements to compare the results of the process variations include attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), contact angle, atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray fluorescence (XRF). A sample screening experiment indicated somewhat less native oxide regrowth using HCl or HBr without sulfur passivation, compared to using HF with sulfur passivation.Type: ApplicationFiled: March 11, 2014Publication date: October 23, 2014Applicant: Intermolecular, Inc.Inventors: Sandip Niyogi, Shuogang Huang, Chi-I Lang
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Publication number: 20140273525Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 ?-thick Al2O3 films.Type: ApplicationFiled: September 6, 2013Publication date: September 18, 2014Applicant: Intermolecular, Inc.Inventors: Kurt Pang, Sean Barstow, Chi-I Lang, Michael Miller, Sandip Niyogi, Prashant B. Phatak
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Publication number: 20140273309Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.Type: ApplicationFiled: October 10, 2013Publication date: September 18, 2014Applicant: Intermolecular, Inc.Inventors: Sandip Niyogi, Sean Barstow, Jay Dedontney, Chi-I Lang, Ratsamee Limdulpaiboon, Martin Romero, Sunil Shanker, James Tsung, J. Watanabe
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Publication number: 20140273493Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.Type: ApplicationFiled: September 19, 2013Publication date: September 18, 2014Applicant: Intermolecular, Inc.Inventors: Ratsamee Limdulpaiboon, Chi-I Lang, Sandip Niyogi, J. Watanabe
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Publication number: 20140264281Abstract: Semiconductor devices and methods of making thereof are disclosed. A field effect transistor (FET) is provided comprising a substrate, a first layer disposed above the substrate, the first layer being operable as a gate electrode, a second layer disposed above the first layer, the second layer comprising a dielectric material, a third layer disposed above the second layer, the third layer comprising a semiconductor, and a fourth layer comprising one or more conductive materials and operable as source and drain electrodes disposed above the third layer. In some embodiments, the dielectric material comprises a high-? dielectric. In some embodiments, the source and drain electrodes comprise one or more metals. The source and drain electrodes are each in ohmic contact with an area of the top surface of the third layer, and substantially all of the current through the transistor flows through the ohmic contacts.Type: ApplicationFiled: December 20, 2013Publication date: September 18, 2014Applicant: Intermolecular, Inc.Inventors: Sandip Niyogi, Sean Barstow, Chi-I Lang, Ratsamee Limdulpaiboon, Dipankar Pramanik, J. Watanabe
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Publication number: 20140252565Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.Type: ApplicationFiled: March 5, 2014Publication date: September 11, 2014Applicant: Intermolecular, Inc.Inventors: Frank Greer, Edwin Adhiprakasha, Chi-I Lang, Ratsamee Limdulpaiboon, Sandip Niyogi, Kurt Pang, J. Watanabe
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Patent number: 8821987Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber, a remote plasma source, and a showerhead. Inert gas ports within the showerhead assembly can be used to alter the concentration and energy of reactive radical or reactive neutral species generated by the remote plasma source in different regions of the showerhead. This allows the showerhead to be used to apply a surface treatment to different regions of the surface of a substrate. Varying parameters such as the remote plasma parameters, the inert gas flows, pressure, and the like allow different regions of the substrate to be treated in a combinatorial manner.Type: GrantFiled: December 17, 2012Date of Patent: September 2, 2014Assignee: Intermolecular, Inc.Inventors: Sunil Shanker, Tony P. Chiang, Chi-I Lang, Sandip Niyogi