Abstract: A capillary type multi-jet nozzle is provided for fabricating high throughput nanofibers by an electrospinning technique. The capillary type multi-jet nozzle includes a cap system with one or more pores and a crew system with a screw groove system. The cap system and the crew system are connected through a cap and crew system. The pores in the cap system are customized in count based on a requirement. The angle between the pores is reduced to make multiple non-interfering and non-hindering jets in less time. A TEFLON® gasket is used for proper tightening and sealing of the cap system and screw system. The cap system includes knurling at an outer surface for grip. The capillary type multi-jet nozzle is made of a conducting material to with stand a high voltage and is fabricated using micro-machining process.

Abstract: A personal care composition includes at least one end-functionalized ionic silicone and at least one film-forming agent.

Abstract: A personal care composition contains at least one personal care component and at least one end-functionalized ionic silicone.

Abstract: A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Abstract: In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.

Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj??(I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix?Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3?, carboxylate —COO?, phosphonate —PO32? group and phosphate —OPO32?, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R?—NR?2+—R??—I??(III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2?a+b+c+d+e+f+g+h+i+j?6000, b+e+h>0 and c+f+i>0.

Abstract: A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface.

Abstract: A method for forming patterns of organic polymer materials. The method can be used to form a layer with two patterned organic polymer materials. The photoresist and solvents used in the photoresist deposition and removal steps do not substantially affect the organic polymer materials.

Abstract: A personal care composition includes at least one end-functionalized ionic silicone and at least one film-forming agent.

Abstract: A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface.

Abstract: Mechanical devices having bistable positions are utilized to form switches and memory devices. The devices are actuatable to different positions and may be coupled to a transistor device in various configurations to provide memory devices. Actuation mechanisms include electrostatic methods and heat. In one form, the mechanical device forms a gate for a field effect transistor. In a further form, the device may be a switch that may be coupled to the transistor in various manners to affect its electrical characteristics when on and off. The memory switch in one embodiment comprises side walls formed with tensile or compressive films. A cross point switch is formed from a plurality of intersecting conductive rows and columns of conductors. Actuatable switches are positioned between each intersection of the rows and columns such that each intersection is independently addressable.

Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.

Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj??(I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix-Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3?, carboxylate —COO?, phosphonate —PO32? group and phosphate —OPO32?, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R?—NR?2+—R??—I??(III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2?a+b+c+d+e+f+g+h+i+j?6000, b+e+h>0 and c+f+i>0.

Abstract: In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.

Abstract: An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.

Abstract: An electromechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.

Abstract: A highly dense form of static random-access memory (SRAM) takes advantage of transistor gates on both sides of silicon and high interconnectivity made possible by the complex form of silicon-on-insulator and three-dimensional integration. This technology allows one to form p-channel and n-channel devices very compactly by taking advantage of placement of gates on both sides, making common contacts and dense interconnections in 3D.

Abstract: An oil-in-water nanoemulsion delivery system that includes at least one oil having a concentration of greater than or equal to 2% (w/w) of at least one polyunsaturated fatty acid, preferably of the omega-3 or omega-6 family, is disclosed. The delivery system further includes at least one emulsifier and also an aqueous phase. Preferably, one or more hydrophobic therapeutic, monitoring and/or diagnostic agents are dispersed in the oil phase. The nanoemulsions may optionally contain other conventional pharmaceutical aids such as stabilizers, preservatives, buffering agents, antioxidants, polymers, proteins and charge inducing agents. The invention also relates to a process for preparing the nanoemulsions and to their use in the oral, parenteral, opthalmic, nasal, rectal or topical delivery of hydrophobic therapeutic, monitoring or diagnostic agents.

Abstract: Mechanical devices having bistable positions are utilized to form switches and memory devices. The devices are actuatable to different positions and may be coupled to a transistor device in various configurations to provide memory devices. Actuation mechanisms include electrostatic methods and heat. In one form, the mechanical device forms a gate for a field effect transistor. In a further form, the device may be a switch that may be coupled to the transistor in various manners to affect its electrical characteristics when on and off. The memory switch in one embodiment comprises side walls formed with tensile or compressive films. A cross point switch is formed from a plurality of intersecting conductive rows and columns of conductors. Actuatable switches are positioned between each intersection of the rows and columns such that each intersection is independently addressable.

Abstract: According to an aspect of the invention, a device structure is provided where charging and discharging occur in a trapping region formed by a stack of films that is placed on the back of a thin silicon channel. Uncoupling the charging mechanisms that lead to the memory function from the front gate transistor operation allows efficient scaling of the front gate. But significantly more important is a unique character of these devices: these structures can be operated both as a transistor and as a memory. The thin active silicon channel and the thin front oxide provide the capability of scaling the structure to tens of nanometers, and the dual function of the device is obtained by using two voltage ranges that are clearly distinct. At small voltages the structure operates as a normal transistor, and at higher voltages the structure operates as a memory device.