Patents by Inventor Sandra Bau

Sandra Bau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing polish-induced damage in a contact structure by forming a capping layer
    Patent number: 7528059
    Abstract: By forming a capping layer after a CMP process for planarizing the surface topography of an ILD layer, any surface irregularities may be efficiently sealed, thereby reducing the risk for forming conductive surface irregularities during the further processing. Consequently, yield loss effects caused by leakage paths or short circuits in the first metallization layer may be significantly reduced.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: May 5, 2009
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Kai Frohberg, Sandra Bau, Johannes Groschopf
  • N-CHANNEL FIELD EFFECT TRANSISTOR HAVING A CONTACT ETCH STOP LAYER IN COMBINATION WITH AN INTERLAYER DIELECTRIC SUB-LAYER HAVING THE SAME TYPE OF INTRINSIC STRESS
    Publication number: 20080054415
    Abstract: By forming a tensile silicon dioxide layer on the basis of a sub-atmospheric deposition technique, the strain-inducing mechanism of a tensile contact etch stop layer for N-channel transistors may be significantly improved. Consequently, for otherwise identical stress conditions, the performance of a respective N-channel transistor may be significantly enhanced.
    Type: Application
    Filed: March 28, 2007
    Publication date: March 6, 2008
    Inventors: Kai Frohberg, Hartmut Ruelke, Sandra Bau
  • METHOD FOR REDUCING POLISH-INDUCED DAMAGE IN A CONTACT STRUCTURE BY FORMING A CAPPING LAYER
    Publication number: 20070232063
    Abstract: By forming a capping layer after a CMP process for planarizing the surface topography of an ILD layer, any surface irregularities may be efficiently sealed, thereby reducing the risk for forming conductive surface irregularities during the further processing. Consequently, yield loss effects caused by leakage paths or short circuits in the first metallization layer may be significantly reduced.
    Type: Application
    Filed: November 14, 2006
    Publication date: October 4, 2007
    Inventors: Kai Frohberg, Sandra Bau, Johannes Groschopf