Patents by Inventor Sandra C. Hangarter

Sandra C. Hangarter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10928351
    Abstract: An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: February 23, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Scott A. Trammell, Rachael L. Myers-Ward, Sandra C. Hangarter, Daniel Zabetakis, David A. Stenger, David Kurt Gaskill, Scott G. Walton
  • Patent number: 10494738
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 3, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20190161887
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 30, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Patent number: 10266963
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: April 23, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20190033247
    Abstract: An electrochemical cell includes a working electrode in contact with an aqueous electrolyte solution, a counter electrode in contact with the aqueous electrolyte solution, and a reference electrode in contact with the aqueous electrolyte solution. The working electrode comprises a plasma modified epitaxial synthesized graphene surface fabricated on SiC.
    Type: Application
    Filed: July 30, 2018
    Publication date: January 31, 2019
    Inventors: Scott A. Trammell, Rachael L. Myers-Ward, Sandra C. Hangarter, Daniel Zabetakis, David A. Stenger, David Kurt Gaskill, Scott G. Walton
  • Publication number: 20140255705
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 30, 2014
    Publication date: September 11, 2014
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter