Patents by Inventor Sandra Hyland
Sandra Hyland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8580075Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.Type: GrantFiled: April 20, 2012Date of Patent: November 12, 2013Assignee: Tokyo Electron LimitedInventors: John A. Hughes, Sandra Hyland, Ralph Kim
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Publication number: 20120199288Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.Type: ApplicationFiled: April 20, 2012Publication date: August 9, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: John A. HUGHES, Sandra HYLAND, Ralph KIM
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Patent number: 7723237Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.Type: GrantFiled: December 15, 2006Date of Patent: May 25, 2010Assignee: Tokyo Electron LimitedInventors: Sandra Hyland, Ian J. Brown, Yannick Feurprier
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Patent number: 7461614Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.Type: GrantFiled: November 12, 2003Date of Patent: December 9, 2008Assignee: Tokyo Electron LimitedInventors: Steven T Fink, Eric J Strang, Arthur H Laflamme, Jr., Jay Wallace, Sandra Hyland
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Patent number: 7432191Abstract: A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.Type: GrantFiled: March 30, 2007Date of Patent: October 7, 2008Assignee: Tokyo Electron LimitedInventors: Harlan D. Stamper, Shannon W. Dunn, Sandra Hyland
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Publication number: 20080241763Abstract: A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.Type: ApplicationFiled: March 30, 2007Publication date: October 2, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Harlan Stamper, Shannon W. Dunn, Sandra Hyland
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Publication number: 20080142988Abstract: A method for removing a damaged low dielectric constant material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process comprises a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.Type: ApplicationFiled: December 15, 2006Publication date: June 19, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Sandra Hyland, Ian J. Brown, Yannick Feurprier
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Patent number: 7226868Abstract: A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.Type: GrantFiled: October 31, 2002Date of Patent: June 5, 2007Assignee: Tokyo Electron LimitedInventors: Aelan Mosden, Sandra Hyland, Minori Kajimoto
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Publication number: 20050098265Abstract: A baffle plate assembly, configured to be coupled to a substrate holder in a plasma processing system, comprises a baffle plate having one or more openings to permit the passage of gas there through, wherein the coupling of the baffle plate to the substrate holder facilitates auto-centering of the baffle plate in the plasma processing system. For example, a centering ring mounted in the substrate holder can comprise a centering feature configured to couple with a mating feature on the baffle plate. After initial assembly of the plasma processing system, the baffle plate can be replaced and centered within the plasma processing system without disassembly and re-assembly of the substrate holder.Type: ApplicationFiled: November 12, 2003Publication date: May 12, 2005Applicant: Tokyo Electron LimitedInventors: Steven Fink, Eric Strang, Arthur Laflamme, Jay Wallace, Sandra Hyland
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Publication number: 20050067098Abstract: A method and system of for introducing an active material to a chemical process in which a processing element including a passive component and an active element is installed within the system and exposed to a chemical process performed within the system. As the chemical process proceeds, the passive component erodes and thereby exposes the active component embedded therein. The introduction of the active component to the chemical process alters the chemical process.Type: ApplicationFiled: September 30, 2003Publication date: March 31, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: John Hughes, Sandra Hyland, Ralph Kim
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Publication number: 20040221797Abstract: A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SiF4/Cl2, O2/F2/Cl2, O2/F2, N2O/F2/Cl2, and NO2/F2/Cl2-based chemistries.Type: ApplicationFiled: June 29, 2004Publication date: November 11, 2004Inventors: Aelan Mosden, Sandra Hyland, Minori Kajimoto
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Patent number: 6376262Abstract: An optical endpoint system controls the overetching of a semiconductor device by using double optical endpoint detection. With a complex spacer, the system monitors the chemistry change at both the top TEOS/nitride interface and the bottom nitride/TEOS interface. This double optical endpoint method reduces the possibility of overetching the layers regardless of the variations in the thickness of the incoming film or the etching characteristics of the etch chamber.Type: GrantFiled: May 31, 2001Date of Patent: April 23, 2002Assignees: National Semiconductor Corporation, Tokyo Electron LimitedInventors: Danielle Ki'ilani Kempa, Sandra Hyland