Patents by Inventor Sandra Malholtra

Sandra Malholtra has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LEAKAGE REDUCTION IN DRAM MIM CAPACITORS
    Publication number: 20130143379
    Abstract: A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (?30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.
    Type: Application
    Filed: December 5, 2011
    Publication date: June 6, 2013
    Applicants: Elpida Memory, Inc., Intermolecular, Inc.
    Inventors: Sandra Malholtra, Kenichi Koyanagi, Hiroyuki Ode, Xiangxin Rui, Takashi Arao, Naonori Fujiwara