Abstract: A metal powder having a composition including the following elements, expressed in content by weight: 6.5%?Si?10%, 4.5%?Nb?10%, 0.2%?B?2.0%, 0.2%?Cu?2.0%, C?2% and optionally containing Ni?10 wt % and/or Co?10 wt % and/or Cr?7 wt % and/or Zr as a substitute for any part of Nb on a one-to-one basis and/or Mo as a substitute for any part of Nb on a one-to-one basis and/or P as a substitute for any part of Si on a one-to-one basis, the balance being Fe and unavoidable impurities resulting from the elaboration, the metal powder having a microstructure including at least 5% in area fraction of an amorphous phase, the balance being made of crystalline ferritic phases with a grain size below 20 ?m and possible precipitates, the metal powder having a mean sphericity SPHT of at least 0.80.

Abstract: A metal powder having a composition including the following elements, expressed in content by weight: 6.5%?Si?10%, 4.5%?Nb?10%, 0.2%?B?2.0%, 0.2%?Cu?2.0%, C?2% and optionally containing Ni?10 wt % and/or Co?10 wt % and/or Cr?7 wt % and/or Zr as a substitute for any part of Nb on a one-to-one basis and/or Mo as a substitute for any part of Nb on a one-to-one basis and/or P as a substitute for any part of Si on a one-to-one basis, the balance being Fe and unavoidable impurities resulting from the elaboration, the metal powder having a microstructure including at least 5% in area fraction of an amorphous phase, the balance being made of crystalline ferritic phases with a grain size below 20 ?m and possible precipitates, the metal powder having a mean sphericity SPHT of at least 0.80.

Abstract: A package includes a first and a second wafer stored therein in a stacked configuration. The first wafer has interconnection conductor material portions extending from a first surface thereof. The interconnection conductor material portions have a maximum height. An interleaf member is located between the first and second wafers. A first recessed portion is formed in the interleaf member, and it has an outer perimeter shape corresponding to an outer perimeter shape of the first wafer. The first recessed portion has a first depth from a top surface of the interleaf member. A second recessed portion is formed in the interleaf member and located at least partially within the first recessed portion, and it has a bottom surface at a second depth from the top surface. The second depth is greater than the first depth. The second depth minus the first depth is greater than the maximum height.

Abstract: A package includes a first and a second wafer stored therein in a stacked configuration. The first wafer has interconnection conductor material portions extending from a first surface thereof. The interconnection conductor material portions have a maximum height. An interleaf member is located between the first and second wafers. A first recessed portion is formed in the interleaf member, and it has an outer perimeter shape corresponding to an outer perimeter shape of the first wafer. The first recessed portion has a first depth from a top surface of the interleaf member. A second recessed portion is formed in the interleaf member and located at least partially within the first recessed portion, and it has a bottom surface at a second depth from the top surface. The second depth is greater than the first depth. The second depth minus the first depth is greater than the maximum height.

Abstract: A package includes a first and a second wafer stored therein in a stacked configuration. The first wafer has interconnection conductor material portions extending from a first surface thereof. The interconnection conductor material portions have a maximum height. An interleaf member is located between the first and second wafers. A first recessed portion is formed in the interleaf member, and it has an outer perimeter shape corresponding to an outer perimeter shape of the first wafer. The first recessed portion has a first depth from a top surface of the interleaf member. A second recessed portion is formed in the interleaf member and located at least partially within the first recessed portion, and it has a bottom surface at a second depth from the top surface. The second depth is greater than the first depth. The second depth minus the first depth is greater than the maximum height.

Abstract: A package includes a first and a second wafer stored therein in a stacked configuration. The first wafer has interconnection conductor material portions extending from a first surface thereof. The interconnection conductor material portions have a maximum height. An interleaf member is located between the first and second wafers. A first recessed portion is formed in the interleaf member, and it has an outer perimeter shape corresponding to an outer perimeter shape of the first wafer. The first recessed portion has a first depth from a top surface of the interleaf member. A second recessed portion is formed in the interleaf member and located at least partially within the first recessed portion, and it has a bottom surface at a second depth from the top surface. The second depth is greater than the first depth. The second depth minus the first depth is greater than the maximum height.