Abstract: The disclosure relates to a method for growing an element III nitride, wherein the growth is carried out on a substrate made of a material capable of maintaining the same crystalline structure from the element III nitride growth temperature to room temperature, the substrate being an M-V—O4 alloy, where M denotes a transition metal or a Group III element, and where V denotes N, P, S, or Sb, or an (Si-IV)O2 alloy, where IV denotes a Group IV element other than silicon. The disclosure also relates to the structures and components obtained after the implementation of the method.

Abstract: The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N2 (said alloy being noted N-IV-N2), wherein said structure also comprises an InN layer. A method for producing an indium nitride layer, a substrate forming plate and the use thereof for indium nitride growth are also disclosed.

Abstract: The invention relates to a structure usable in electronic, optical or optoelectronic engineering which comprises a substantially crystalline layer made of an alloy consisting of at least one element of the column II of the periodic elements system and/or at least one element of the column IV of the periodic elements system and of N2 (said alloy being noted N-IV-N2), wherein said structure also comprises an InN layer. A method for producing an indium nitride thereof for indium nitride growth are also disclosed.

Abstract: The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organize onto the crystalline buffer so as to form a plurality of sizeable quantum dots.

Abstract: The invention concerns a method for manufacturing sizeable quantum dots of Indium Nitride in which a layer of Indium Nitride is grown onto a layer of crystalline buffer. The crystalline buffer is chosen with a lattice structure similar to the lattice structure of Indium Nitride and with the lattice mismatch between Indium Nitride and the crystalline buffer being greater than 5%. During the growth of Indium Nitride, surface strains are produced by the crystalline buffer, allowing the Indium Nitride to self-organise onto the crystalline buffer so as to form a plurality of sizeable quantum dots.