Abstract: The invention relates to a thermoelectric device (10) with several, differently-doped and electrically-conductively interconnected semiconductors (12), at least one carrier substrate (14) arranged on a first side of the semiconductors (12), and at least one carrier substrate (16a-16d) arranged on a second side, opposite the first side, of the semiconductors (12), wherein at least one carrier substrate (14, 16a-16d) arranged on the first side or the second side of the semiconductors (12) has at least one recess (18a-18d, 20a-20d) which extends through the carrier substrate (14, 16a-16d) and is surrounded by substrate material, and which is designed to receive a fastening means (22a-22d).

Abstract: A device (1) for temperature control and for recognizing an occupation of certain areas by a person and/or an object are disclosed. The device includes at least one electrically conductive heating line (23) that is designed for releasing heat energy, and at least one electrode (3, 5) adjoining the at least one electrically conductive heating line (23), the longitudinal axis of the electrode extending, at least in sections, along the at least one heating line. The at least one electrode (3, 5) is mechanically coupled to the at least one heating line (23), and is designed as a component of a capacitive sensor system, by means of which a presence of persons and/or objects within a certain area is determinable.

Abstract: Disclosed is a method for depositing microcrystalline silicon on a substrate in a plasma chamber system, comprising the following steps: prior to initiating the plasma, providing the plasma chamber system with at least one reactive, silicon-containing gas and hydrogen, or exclusively hydrogen; initiating the plasma; after the plasma is initiated, continuously supplying the chamber system exclusively with reactive, silicon-containing gas, or after the plasma is initiated, continuously supplying the chamber system with at least one mixture comprising a reactive, silicon-containing gas and hydrogen, wherein the concentration of reactive, silicon-containing gas during the supply into the chamber is adjusted to greater than 0.5%; adjusting the plasma power to between 0.1 and 2.5 W/cm2 electrode surface; selecting a deposition rate of greater than 0.5 nm/s; and depositing, the microcrystalline layer having a thickness of less than 1000 nanometers on the substrate.