Abstract: A spectral filter includes an assembly of filtering cells. Each cell has a same nanostructured pattern and a preferential direction of the pattern. This preferential direction is, for each cell, oriented approximately radially with respect to a single point of the spectral filter. Alternatively, this preferential direction is, for each cell, oriented approximately ortho-radially with respect to the single point of the spectral filter. The single point may be a center point. Alternatively, the single point may correspond to an optical axis of a lens element associated with the spectral filter.

Abstract: An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.

Abstract: A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

Abstract: A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.

Abstract: A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

Abstract: An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.

Abstract: An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.