Patents by Inventor Sandro Callegari

Sandro Callegari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
    Publication number: 20120326314
    Abstract: A layered structure and semiconductor device and methods for fabricating a layered structure and semiconductor device. The layered structure includes: a base layer including a material containing titanium nitride, tantalum nitride, or a combination thereof; a conductive layer including a material containing: tantalum aluminum nitride, titanium aluminum nitride, tantalum silicon nitride, titanium silicon nitride, tantalum hafnium nitride, titanium hafnium nitride, hafnium nitride, hafnium carbide, tantalum carbide, vanadium nitride, niobium nitride, or any combination thereof; and a tungsten layer. The semiconductor device includes: a semiconductor substrate; a base layer; a conductive layer; and a tungsten layer.
    Type: Application
    Filed: September 6, 2012
    Publication date: December 27, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen L. Brown, John Bruley, Cyril Cabral, JR., Sandro Callegari, Martin M. Frank, Michael A. Guillorn, Marinus Hopstaken, Vijay Narayanan, Keith Kwong Hon Wong
  • LARGE-GRAIN, LOW-RESISTIVITY TUNGSTEN ON A CONDUCTIVE COMPOUND
    Publication number: 20120228773
    Abstract: A layered structure and semiconductor device and methods for fabricating a layered structure and semiconductor device. The layered structure includes: a base layer including a material containing titanium nitride, tantalum nitride, or a combination thereof; a conductive layer including a material containing: tantalum aluminum nitride, titanium aluminum nitride, tantalum silicon nitride, titanium silicon nitride, tantalum hafnium nitride, titanium hafnium nitride, hafnium nitride, hafnium carbide, tantalum carbide, vanadium nitride, niobium nitride, or any combination thereof; and a tungsten layer. The semiconductor device includes: a semiconductor substrate; a base layer; a conductive layer; and a tungsten layer.
    Type: Application
    Filed: March 8, 2011
    Publication date: September 13, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Stephen L. Brown, John Bruley, Cyril Cabral, JR., Sandro Callegari, Martin M. Frank, Michael A. Guillorn, Marinus Hopstaken, Vijay Narayanan, Keith Kwong Hon Wong