Abstract: A method for manufacturing vias in a silicon wafer, the silicon wafer having a <110> crystal orientation, and having a <111> plane that is perpendicular to a surface of the wafer, tilted by 35.26°, the method comprising the steps of providing a mask having a rhomboidal-shaped opening onto a surface of the silicon wafer, such that edges of the rhomboidal-shaped opening line up with a <111> plane of a crystalline structure of the silicon wafer, etching a hole in the silicon wafer at the rhomboidal-shaped opening, and polishing the hole after the etching by a anisotropic etching.

Abstract: A method for manufacturing vias in a silicon wafer, the silicon wafer having a <110> crystal orientation, and having a <111> plane that is perpendicular to a surface of the wafer, tilted by 35.26°, the method comprising the steps of providing a mask having a rhomboidal-shaped opening onto a surface of the silicon wafer, such that edges of the rhomboidal-shaped opening line up with a <111> plane of a crystalline structure of the silicon wafer, etching a hole in the silicon wafer at the rhomboidal-shaped opening, and polishing the hole after the etching by a anisotropic etching.

Abstract: An apparatus (1) for generating electricity using photovoltaic panels (2) comprises a panel (2) mounting structure (4) adapted to position the panels in a body of water in such a way that the top faces (3) of the panels (2) designed to receive the solar radiation are operatively covered by a layer of water of predetermined depth. A method for generating electricity using photovoltaic panels (2) comprises preparing a panel (2) mounting structure (4) and positioning the structure (4) in a body of water in such a way that the top faces (3) of the panels (2) designed to receive the solar radiation are operatively covered by a layer of water of predetermined thickness.