Patents by Inventor SANDRO J. DI GIACOMO
SANDRO J. DI GIACOMO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10312141Abstract: A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer.Type: GrantFiled: August 16, 2016Date of Patent: June 4, 2019Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Christopher F. Kirby, Sandro J. Di Giacomo, Michael Rennie
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Patent number: 10312142Abstract: A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.Type: GrantFiled: November 28, 2016Date of Patent: June 4, 2019Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Christopher F. Kirby, Michael Rennie, Daniel J. O'Donnell, Sandro J. Di Giacomo
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Publication number: 20180151430Abstract: A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.Type: ApplicationFiled: November 28, 2016Publication date: May 31, 2018Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Christopher F. KIRBY, Michael Rennie, Daniel J. O'Donnell, Sandro J. Di Giacomo
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Publication number: 20180053689Abstract: A method is provided of forming a superconductor device interconnect structure. The method includes forming a first dielectric layer overlying a substrate, and forming a superconducting interconnect element in a first dielectric layer, such that the superconducting interconnect element has a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The method also includes performing a plasma clean on a top surface of the first interconnect layer, and depositing a second dielectric layer over the first dielectric layer.Type: ApplicationFiled: August 16, 2016Publication date: February 22, 2018Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: CHRISTOPHER F. KIRBY, SANDRO J. DI GIACOMO, MICHAEL RENNIE
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Patent number: 9812445Abstract: A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.Type: GrantFiled: August 18, 2015Date of Patent: November 7, 2017Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Patrick B. Shea, Michael Rennie, Sandro J. Di Giacomo
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Publication number: 20170309618Abstract: A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.Type: ApplicationFiled: August 18, 2015Publication date: October 26, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: PATRICK B. SHEA, Michael Rennie, Sandro J. Di Giacomo
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Publication number: 20170162513Abstract: A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.Type: ApplicationFiled: December 8, 2015Publication date: June 8, 2017Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: JAMES T. KELLIHER, SANDRO J. DI GIACOMO, CORY E. SHERMAN, BRIAN P. WAGNER
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Patent number: 9653398Abstract: A method of forming a superconductor device is provided. The method includes depositing a non-oxide based dielectric layer over a substrate, depositing a photoresist material layer over the non-oxide based dielectric layer, irradiating and developing the photoresist material layer to form a via pattern in the photoresist material layer, and etching the non-oxide based dielectric layer to form openings in the non-oxide based dielectric layer based on the via pattern. The method further comprises stripping the photoresist material layer, and filling the openings in the non-oxide based dielectric with a superconducting material to form a set of superconducting contacts.Type: GrantFiled: December 8, 2015Date of Patent: May 16, 2017Assignee: Northrop Grumman Systems CorporationInventors: James T. Kelliher, Sandro J. Di Giacomo, Cory E. Sherman, Brian P. Wagner
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Publication number: 20150357448Abstract: A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.Type: ApplicationFiled: August 18, 2015Publication date: December 10, 2015Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: PATRICK B. SHEA, Michael Rennie, Sandro J. Di Giacomo
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Patent number: 9142546Abstract: A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.Type: GrantFiled: December 5, 2013Date of Patent: September 22, 2015Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: Patrick B. Shea, Michael Rennie, Sandro J. Di Giacomo
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Publication number: 20150162322Abstract: A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region.Type: ApplicationFiled: December 5, 2013Publication date: June 11, 2015Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATIONInventors: PATRICK B. SHEA, MICHAEL RENNIE, SANDRO J. DI GIACOMO