Abstract: A method for removing ferric ions contained in a sulfate-based iron electroplating solution comprises a step of regeneration for reduction of the ferric ions by circulating a ferric ion-containing sulfate-based iron electroplating solution in a solution bath containing ferrous metal charged therein, wherein the ferrous metal is charged in an amount that satisfies the following formula (1): S?0.01 Iconv/Cmax (1). In formula (1), S indicates a total surface (m2) of ferrous metal, Cmax indicates a maximum permissible ion concentration level (g/L) of the ferric ions in the solution, and Iconv indicates, as represented by the following formula (2), converted current (A) obtained by dividing the sum of current (I) applied to an electroplated cell during the plating time (tp, sec) by the regeneration time (tr, sec) for reduction of the ferric ions in an electrolyte.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: An inductor includes a first magnetic body having a toroidal shape and having a ferrite; and a second magnetic body configured to be different from the first magnetic body and including a metal ribbon, wherein the second magnetic body includes an outer magnetic body disposed on an outer circumferential surface of the first magnetic body and an inner magnetic body disposed on an inner circumferential surface of the first magnetic body, and each of the outer magnetic body and inner magnetic body is wound in a plurality of layers in a circumferential direction of the first magnetic body.

Abstract: The present invention relates to a solution for electroplating iron, comprising: iron ions comprising first iron ions and second iron ions; a complexing agent; and unavoidable impurities, wherein the amount of second iron ions among the iron ions is 5 to 60 wt %. According to the present invention, electroplating efficiency is high, there is no drop in electroplating efficiency due to a continuous plating operation, and sludge generation is prevented, and, thus, the plating solution is easily managed. Burning can be prevented even in a high current density operation, and, thus, a high-quality iron-plated layer can be achieved. The plating solution does not need to be replaced, as the concentration of second iron ions generated by a plating reaction is maintained to be constant, and, thus, the present invention is appropriate for a continuous plating process.