Patents by Inventor Sang-Bai Yi

Sang-Bai Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device and fabrication method thereof
    Patent number: 6885070
    Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.
    Type: Grant
    Filed: September 30, 2002
    Date of Patent: April 26, 2005
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Sang-Bai Yi, Jae-Min Yu, Sung-Chul Lee
  • Semiconductor memory device and fabrication method thereof
    Publication number: 20030027389
    Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.
    Type: Application
    Filed: September 30, 2002
    Publication date: February 6, 2003
    Applicant: LG Semicon Co.
    Inventors: Sang-Bai Yi, Jae-Min Yu, Sung-Chul Lee
  • Semiconductor memory device and fabrication method thereof
    Patent number: 6479346
    Abstract: In a semiconductor memory device including memory cells and a peripheral circuit unit, a memory cell has a first gate structure formed on a semiconductor substrate; a first impurity region of a first conductive type formed in the substrate on a first side of the gate structure; and a second impurity region formed in the substrate on a second side of the gate structure, the second impurity region including: a third impurity region of the first conductive type, a fourth impurity region of the first conductive type between the third impurity region and the second side of the gate structure, and a halo ion region of a second conductive type formed adjacent to the fourth impurity region.
    Type: Grant
    Filed: April 7, 2000
    Date of Patent: November 12, 2002
    Assignee: LG Semicon Co., Ltd.
    Inventors: Sang-Bai Yi, Jae-Min Yu, Sung-Chul Lee