Abstract: A service identifying and processing method using a wireless terminal message according to an exemplary embodiment of the present invention includes (a) receiving a wireless terminal message by a first entity which is a mobile device; and (b) expressing, by a first agent which is an information processing application program installed on the first entity, entity information of second entity based on the wireless terminal message and service confirmation information related to service provided by the second entity, through an application screen by the first agent.

Abstract: There is provided a light emitting apparatus including: at least one pair of lead frames; a light emitting device electrically connected to the lead frames to emit ultraviolet rays; a body including a side wall surrounding the light emitting device, and a groove portion formed in an upper surface of the side wall to receive an adhesive; and a lens part disposed above the light emitting device and fixed to the upper surface of the side wall of the body by the adhesive.

Abstract: A lens is provided in an asymmetric shape including at least two curved surfaces with different light distribution angles. Therefore, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased while reducing dazzle. When a lighting apparatus including the lens is used as a street light, light directly incident to a driver is minimized, thereby reducing dazzle to the driver. During a night drive, brightness at a far forward position of the driver may be increased. In addition, light emitted toward a street may be increased while reducing light emitted toward a sidewalk. As a result, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased. Also, light pollution may be reduced.

Abstract: There is provided a light emitting apparatus including: at least one pair of lead frames; a light emitting device electrically connected to the lead frames to emit ultraviolet rays; a body including a side wall surrounding the light emitting device, and a groove portion formed in an upper surface of the side wall to receive an adhesive; and a lens part disposed above the light emitting device and fixed to the upper surface of the side wall of the body by the adhesive.

Abstract: A lens is provided in an asymmetric shape including at least two curved surfaces with different light distribution angles. Therefore, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased while reducing dazzle. When a lighting apparatus including the lens is used as a street light, light directly incident to a driver is minimized, thereby reducing dazzle to the driver. During a night drive, brightness at a far forward position of the driver may be increased. In addition, light emitted toward a street may be increased while reducing light emitted toward a sidewalk. As a result, uniformity ratio of illuminance and coefficient of utilization (CU) may be increased. Also, light pollution may be reduced.

Abstract: Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

Abstract: High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

Abstract: High-voltage MOS transistors with a floated drain-side auxiliary gate are provided. The high-voltage MOS transistors include a source region and a drain region provided in a semiconductor substrate. A main gate electrode is disposed over the semiconductor substrate between the drain region and the source region. A lower drain-side auxiliary gate and an upper drain-side auxiliary gate are sequentially stacked over the semiconductor substrate between the main gate electrode and the drain region. The lower drain-side auxiliary gate is electrically insulated from the semiconductor substrate, the main gate electrode and the upper drain-side auxiliary gate. Methods of fabricating the high-voltage MOS transistors are also provided.

Abstract: NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.

Abstract: NAND-type flash memory devices and methods of fabricating the same are provided. The NAND-type flash memory device includes a plurality of isolation layers running parallel with each other, which are formed at predetermined regions of a semiconductor substrate. This device also includes a string selection line pattern, a plurality of word line patterns and a ground selection line pattern which cross over the isolation layers and active regions between the isolation layers. Source regions are formed in the active regions adjacent to the ground selection line patterns and opposite the string selection line pattern. The source regions and the isolation layers between the source regions are covered with a common source line running parallel with the ground selection line pattern.