Abstract: A storage node, a method of fabricating the same, a semiconductor memory device and a method of fabricating the same is provided. The method of fabricating a storage node may include forming a lower electrode, forming an irradiated data storage layer and forming an upper electrode.

Abstract: Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.

Abstract: A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.

Abstract: Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto the substrate and reducing the second absorbed layer to form a silicon layer. The combination of the silicon oxide layer(s) and the silicon layer(s) comprise, in turn, a composite SRO layer. These manufacturing methods facilitate control of the oxygen concentration in the SRO, the relative thicknesses of the silicon oxide and silicon layers, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices.

Abstract: Provided are a nonvolatile memory device, a layer deposition apparatus and a method of fabricating a nonvolatile memory device using the same. The apparatus may include a chamber capable of holding a substrate, a particle-discharging target discharging particles toward the substrate, and a first ion beam gun accelerating a first plurality of ions and irradiating the accelerated ions toward the substrate. The method of fabricating a nonvolatile memory device may include discharging particles from a target toward a substrate, accelerating and irradiating a first plurality of ions toward the substrate, forming a reaction product by reacting the discharged particles and the accelerated and irradiated first plurality of ions, and forming a data storage layer having a deposited layer on the substrate. The nonvolatile memory device may include a data storage layer including a transition metal oxide layer formed by reacting discharged transition metal particles and accelerated and irradiated oxygen ions.

Abstract: Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.

Abstract: A conductive carbon nanotube tip and a manufacturing method thereof are provided. The conductive carbon nanotube tip includes a carbon nanotube tip substantially vertically placed on a substrate, and a ruthenium coating layer covering a surface of the carbon nanotube tip and extending to at least a part of the substrate. The manufacturing method includes substantially vertically placing a carbon nanotube tip on a substrate, and forming a ruthenium coating layer on the carbon nanotube tip and at least a part of the substrate.

Abstract: Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include absorbing a first silicon source gas onto the substrate, oxidizing the first absorbed layer to form a silicon oxide layer, absorbing a second silicon source gas onto the substrate and reducing the second absorbed layer to form a silicon layer. The combination of the silicon oxide layer(s) and the silicon layer(s) comprise, in turn, a composite SRO layer. These manufacturing methods facilitate control of the oxygen concentration in the SRO, the relative thicknesses of the silicon oxide and silicon layers, and provides improved step coverage, thus allowing the manufacturing of high quality semiconductor devices.

Abstract: A storage node, a method of fabricating the same, a semiconductor memory device and a method of fabricating the same is provided. The method of fabricating a storage node may include forming a lower electrode, forming an irradiated data storage layer and forming an upper electrode.