Abstract: Embodiments of the inventive concept provide a wireless power apparatus for a substrate treating apparatus and a manufacturing method for the wireless power apparatus for the substrate treating apparatus for preventing a heat generation by preventing a generation of an eddy current in a coupling element, if the coupling element is used around an outer housing at which an induced magnetic field is formed. The inventive concept provides a wireless power apparatus for a substrate treating apparatus.

Abstract: A method and apparatus for aligning a wafer using a laser scanner, and a semiconductor transfer device are provided. The method includes a laser irradiation operation of irradiating a laser toward the wafer using a laser scanner disposed on a rear side or a lower side of the wafer and obtaining an image, a dataset acquisition operation of obtaining location information of at least three wafer edges by using a distance corresponding to a laser irradiation direction to a wafer edge in the image, a calculation operation of calculating a center point of the wafer by using the obtained location information of the wafer edge, and a detection operation of detecting whether a calculated center point is within a preset tolerance range.

Abstract: An electronic device is provided. The electronic device includes an outer housing that comprises a first surface facing a first direction, a second surface facing a second direction opposite to the first direction, and a side surface surrounding a space between the first surface and the second surface, a display adapted to expose at least a portion of the display through the first surface of the outer housing, a PCB arranged between the second surface and the display in an interior of the outer housing, a communication circuit arranged on or over the PCB, a first conductive structure formed of at least one of the first surface or at least a portion of the side surface is electrically connected to the communication circuit, and a second conductive structure formed of the portion of the display electrically connected to the first conductive structure.

Abstract: The present invention relates to cytochrome P450 protein originating from Arabidopsis thaliana which can be used for increasing seed size or storage protein content in seed or for increasing water stress resistance of plant, a gene encoding said protein, a recombinant plant expression vector comprising said gene, a method of increasing seed size or storage protein content in seed and a method of increasing water stress resistance of plant by using said vector, plants produced by said method and transgenic seed of said plants. According to the present invention, by using cytochrome P450 gene of the present invention, seed size or storage protein content in seed can be increased or water stress resistance of plant can be increased.

Abstract: The present invention relates to cytochrome P450 protein originating from Arabidopsis thaliana which can be used for increasing seed size or storage protein content in seed or for increasing water stress resistance of plant, a gene encoding said protein, a recombinant plant expression vector comprising said gene, a method of increasing seed size or storage protein content in seed and a method of increasing water stress resistance of plant by using said vector, plants produced by said method and transgenic seed of said plants. According to the present invention, by using cytochrome P450 gene of the present invention, seed size or storage protein content in seed can be increased or water stress resistance of plant can be increased.

Abstract: A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: A method of measuring the thickness of a thin layer, by which the thickness of a top layer formed on the surface of a wafer can be detected in real time, and an apparatus therefor. This method includes irradiating light onto a cell and obtaining luminance from reflected light, detecting the thickness of a thin layer in an oxide site which is adjacent to the cell, repeating the irradiating and detecting steps to obtain a plurality of luminance values from cells formed on the wafer and a plurality of thickness values of thin layers in oxide sites that are adjacent to the cells, and employing a thickness calculation formula for calculating the thickness of a top layer using the plurality of luminance values and plurality of thickness values obtained in the prior steps.

Abstract: A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: Embodiments of the present invention include methods for measuring a semiconductor wafer which has been subjected to an etching process. Light is radiated at the semiconductor wafer. Light within a selected wavelength band reflected from the semiconductor wafer is measured to provide an output value. A ratio of the output value and a reference value is determined. The reference value may be based on light within the selected wavelength band reflected from a reference surface, such as a bare silicon reference surface. It is determined that the semiconductor wafer is under-etched if the determined ratio does not meet the reference value. A normalized optical impedance or a polarization ratio may be measured based on light within a selected wave length band reflected from the semiconductor wafer to provide the output value in various embodiments of the present invention.

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images.

Abstract: There is provided a contact failure inspection system and method for semiconductor devices and a method of manufacturing semiconductor devices. Using digitized values for electron signals detected using a scanning electron microscope, contacts can be inspected to identify failures such as non-open contact holes. The contact failure inspection is performed by comparing the electron signal value detected from a unit area including at least one contact hole with values representative of the electron signal corresponding to a normal contact.

Abstract: A method and device detect for the presence of defects, namely micro-scratches, in the surface of a wafer. Light is projected onto a medium at the surface of the wafer, at an angle at which light is not reflected by another layer that may be located under the medium. Light reflected by the surface of the wafer is converted into an electrical signal but any light scattered by the surface is excluded as much as possible from contributing to the formation of the signal. The electric signal corresponds to the intensity of the light reflected from the surface of the wafer. As the light is scanned across the wafer, the values of the electric signal are compared to yield a determination of whether defects are present in the medium. Because the light projected onto the surface of the wafer will be scattered by defects such as micro-scratches, the wafer can be successfully monitored for the existence of such micro-scratches.

Abstract: An air shower system which includes an air shower room, an underground region in fluid communication with a clean room, an air supply chamber surrounding the sidewalls and ceiling of the air shower room, the air supply chamber having an intake portion in fluid communication with the underground region, a plurality of air supply nozzles provided in the sidewalls and ceiling of the air shower room, a plurality of air discharge holes provided in the floor of the air shower room, the air discharge holes being in fluid communication with the underground region, a plurality of filters provided in side portions of the air supply chamber disposed alongside the sidewalls of the air shower room, and, a plurality of blowers provided in the side portions of the air supply chamber for forcing air from the underground region through the filters and thence, through the air supply nozzles, into the interior of the air shower room, for blowing particulate matter off of a person situated in the interior of the shower room, the