Abstract: The present invention relates to a method for preparing an alkali metal ion conductive chalcogenide-based solid electrolyte, a solid electrolyte prepared thereby, and an all-solid-state battery comprising the same.

Abstract: An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

Abstract: An arc lamp includes an arc tube configured to receive a reaction gas therein, and an anode and a cathode disposed opposite one another within the arc tube and configured to generate an electrical arc. The anode includes an anode head portion extending inwardly from an end portion of the arc tube, and an anode tip portion bonded to the anode head portion and comprising a trench extending in a top surface along a peripheral region of the anode tip portion.

Abstract: A wafer processing apparatus may include a reaction tube extending in a vertical direction and defining a process chamber for receiving a boat that holds a plurality of wafers. A gas injector may be configured to supply a reaction gas into the process chamber and may include a gas distributor extending in the vertical direction in the reaction tube. The gas injector may have a plurality of ejection holes for spraying the reaction gas. An inner diameter of the gas distributor may be at least 10 mm, and a sectional area ratio of the total sectional area of the ejection holes to a sectional area of the gas distributor is about 0.3 or less.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Abstract: A gas supply pipe and a chemical vapor deposition (CVD) apparatus including the gas supply pipe. The gas supply pipe includes: a first pipe connected to a gas storage apparatus via a gas supply line to supply a reacting gas into a reacting furnace; and a second pipe thermally contacting the first pipe to cool the first pipe, wherein a first end of the second pipe is connected to a cooling medium supplying unit via a cooling medium line such that a cooling medium circulates inside the second pipe, and a second, opposite end of the second pipe is connected to a cooling medium collecting unit.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Abstract: There is provided a diffuser for implementing a diffusing process in an equipment for manufacturing semiconductor devices to increase or maximize its productivity. The diffuser comprises a reaction pipe; a plate joined to the underside of the reaction pipe for sealing the reaction pipe and defining a work space therewithin. A plurality of wafers are disposed within the work space. A gas injection tube is provided for supplying a reactive gas to the work space. A plurality of plasma electrodes are disposed adjacent to the gas injection tube for applying high frequency power to a reactive gas to induce a plasma reaction.

Abstract: A furnace for heating a wafer is provided comprising a process chamber including a space for processing a plurality of wafers. A heating member is disposed in the process chamber which generates a light and heat for heating the wafers. Moreover, a light blocking member is disposed in the process chamber for preventing the light from being transmitted onto the wafers but which permits the heat to be transmitted onto the wafers for heating the wafers. The furnace can be employed in an apparatus for chemical vapor deposition.