Abstract: A semiconductor structure is disclosed, including a first gate and a second gate aligned with the first gate, a first gate via, a second gate via, multiple conductive segments, and a first conductive line. The first gate via is disposed on the first gate and the second gate via is disposed on the second gate. The first and second gates are configured to be a terminal of a first logic circuit, which is coupled to a terminal of a second logic circuit. The first conductive line is coupled to the first gate through a first connection via and the first gate via and is electrically coupled to the second gate through a second connection via and the second gate via.

Abstract: A semiconductor structure is disclosed, including a first gate and a second gate aligned with the first gate, a first gate via, a second gate via, multiple conductive segments, and a first conductive line. The first gate via is disposed on the first gate and the second gate via is disposed on the second gate. The first and second gates are configured to be a terminal of a first logic circuit, which is coupled to a terminal of a second logic circuit. The first conductive line is coupled to the first gate through a first connection via and the first gate via and is electrically coupled to the second gate through a second connection via and the second gate via.

Abstract: A layout method and a semiconductor device are disclosed. The layout method includes: generating a design layout by placing a cell, wherein the cell includes: a first conductive segment overlapping a source/drain region and disposed immediately adjacent to a first power rail, wherein the first conductive segment has a length substantially equal to a cell length; a second conductive segment; and a third conductive segment between the first and second conductive segments. The layout method further includes: providing a fourth conductive segment and a fifth conductive segment to the design layout, wherein the fourth and fifth conductive segments are aligned in a first direction.

Abstract: A method of forming an integrated circuit includes generating a first and a second standard cell layout design, generating a first set of cut feature layout patterns extending in a first direction, and manufacturing the integrated circuit based on the first or second standard cell layout design. Generating the first standard cell layout design includes generating a first set of conductive feature layout patterns extending in the first direction, and overlapping a first set of gridlines extending in the first direction. Generating the second standard cell layout design includes generating a second set of conductive feature layout patterns extending in the first direction and overlapping a second set of gridlines extending in the first direction. A side of a first cut feature layout pattern extending in the first direction is aligned with a first gridline of the first or second set of gridlines.

Abstract: A semiconductor structure is disclosed, including a first gate and a second gate aligned with the first gate, a first gate via, a second gate via, multiple conductive segments, and a first conductive line. The first gate via is disposed on the first gate and the second gate via is disposed on the second gate. The first and second gates are configured to be a terminal of a first logic circuit, which is coupled to a terminal of a second logic circuit. The first conductive line is coupled to the first gate through a first connection via and the first gate via and is electrically coupled to the second gate through a second connection via and the second gate via.

Abstract: An integrated circuit structure includes a first transistor, a second transistor, a first conductive via, a second conductive via, and a connection line. The first transistor includes a first active region, a first gate electrode over the first active region; and a first channel in the first active region and under the first gate electrode. The second transistor includes a second active region, a second gate electrode over the second active region, and a second channel in the second active region and under the second gate electrode. The first conductive via is electrically connected to the first gate electrode. The second conductive via is electrically connected to the second gate electrode. The connection line electrically connects the first and second conductive vias. The first transistor and the first conductive via and the second transistor and the second conductive via are arranged mirror-symmetrically with respect to a symmetry plane.

Abstract: A method of forming an integrated circuit includes generating a first and a second standard cell layout design, generating a first set of cut feature layout patterns extending in a first direction, and manufacturing the integrated circuit based on the first or second standard cell layout design. Generating the first standard cell layout design includes generating a first set of conductive feature layout patterns extending in the first direction, and overlapping a first set of gridlines extending in the first direction. Generating the second standard cell layout design includes generating a second set of conductive feature layout patterns extending in the first direction and overlapping a second set of gridlines extending in the first direction. A side of a first cut feature layout pattern extending in the first direction is aligned with a first gridline of the first or second set of gridlines.