Abstract: A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.

Abstract: A plate heat exchanger realizing improved heat exchange performance by increasing the fluidity of fluids and by promoting turbulence of the fluids, including: heat exchange elements stacked by being laid one on top of another and individually formed by assembling upper and lower plates, with an internal flow channel defined in each of the heat exchange elements and an external flow channel defined between the heat exchange elements, the internal and external flow channels allowing internal and external fluids to pass therethrough, respectively, wherein the upper and lower plates are provided with respective wave patterns having ridges and valleys, each of the heat exchange elements has an inlet port and an outlet port, the upper and lower plates respectively have an upper flange and a lower flange which are assembled with each other through fitting, and first and second flat parts are formed around the upper and lower flanges.

Abstract: In a method of forming an epitaxial layer, a first plasma may be generated from a first reaction gas in a first region. The first plasma may be applied to a second reaction gas provided to a second region isolated from the first region to generate a second plasma from the second reaction gas. A blocking gas may be injected into the second region toward an edge of the substrate to help prevent the first plasma and the second plasma from being horizontally diffused. The first plasma and the second plasma may be applied to the substrate to form the epitaxial layer. Thus, the epitaxial layer may be formed at a temperature relatively lower than a temperature in a heating process.

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract: An input device and a method for providing an input device are provided. The input device assembly includes a base, a sensor support, and a scissor mechanism attached to the base and the sensor support. The scissor mechanism allows for only substantially uniform translation of the sensor support towards the base in response to a force biasing the sensor support substantially towards the base.

Abstract: Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.

Abstract: Provided herein is a robot for inspecting pipelines as it moves along an outer surface of a pipeline, the robot comprising: a plurality of body parts detachably provided along a longitudinal direction of the pipeline; a connector configured to connect adjacent body parts, and to distance one of the connected body parts away from the pipeline so that the plurality of body parts may cross an obstacle; and a controller configured to control the connector to lift one of the body parts to cross an obstacle, with another body part secured to the pipeline.

Abstract: Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.

Abstract: A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench.

Abstract: A method for fabricating an LCD device includes providing first and second substrates; forming an active layer on the first substrate and forming first and second ohmic contact layers on the active layer; forming a first insulation film on the first substrate; forming a gate electrode on the first substrate; forming a second insulation film on the first substrate; forming a pixel electrode on the first substrate; forming a third insulation film on the first substrate; removing a portion of the first to third insulation film to form first and second contact holes, wherein the first contact hole exposes a portion of the first ohmic contact layer and the second contact hole exposes a portion of the second ohmic contact layer; forming a source electrode electrically connected with the first ohmic contact layer within the first contact hole; forming a drain electrode electrically connected with the second ohmic contact layer and the pixel electrode within the second contact hole; and attaching the first and second

Abstract: Provided is a memo synchronization system, a mobile system, and a method for synchronizing memo data. The memo synchronization system includes a storage device, an authentication unit configured to authenticate a user by receiving authentication information of the user from a mobile terminal via a memo application installed in the mobile terminal, and a synchronization unit stored on the storage device and configured to synchronize memo data stored in the mobile terminal with memo data stored in a web storage space of an online memo service based on a request for synchronization transmitted from the mobile terminal through the memo application. The request for synchronization includes a synchronization request generated by the memo application according to an event set by the user.

Abstract: A plate heat exchanger realizing improved heat exchange performance by increasing the fluidity of fluids and by promoting turbulence of the fluids, including: heat exchange elements stacked by being laid one on top of another and individually formed by assembling upper and lower plates, with an internal flow channel defined in each of the heat exchange elements and an external flow channel defined between the heat exchange elements, the internal and external flow channels allowing internal and external fluids to pass therethrough, respectively, wherein the upper and lower plates are provided with respective wave patterns having ridges and valleys, each of the heat exchange elements has an inlet port and an outlet port, the upper and lower plates respectively have an upper flange and a lower flange which are assembled with each other through fitting, and first and second flat parts are formed around the upper and lower flanges.

Abstract: A plate heat exchanger capable of increasing the fluidity of a fluid and realizing improved heat exchange efficiency, wherein each of stacked heat exchange elements are formed by assembling upper and lower plates, with first and second flow channels for first and second fluids respectively defined in each element and between the elements, inlet and outlet ports formed in opposite ends of the element, upper and lower flanges formed on the respective upper and lower plates, and upper and lower flow grooves diagonally extending on the lower surface of the upper plate and on the upper surface of the lower plate and intersecting with each other to define the first flow channel, wherein a flow guide structure for guiding the first fluid in at least two flow directions is provided on each of the areas around the inlet and outlet ports of the upper and lower plates.

Abstract: A plasma display is disclosed. In the plasma display, a first transistor for applying a low level voltage of a sustain pulse is connected to a high voltage terminal of a scanning circuit and a second transistor for applying a high level voltage of the sustain pulse is connected to a low voltage terminal of the scanning circuit. The first and the second transistors are alternatively turned on during sustain period, and the sustain pulse is applied to the scan electrode.

Abstract: A plasma display device including a plasma display panel (PDP), a temperature detector for detecting temperature of the PDP, a driver for applying a driving voltage to a scan electrode, and a controller for generating a control signal to control the driver according to the temperature. The driver includes a transistor and first and second resistors. The transistor is coupled between a first power source and the scan electrode. The first power source supplies a scan voltage to the scan electrode. At least one of the first resistor and the second resistor is a variable resistor having a resistance that varies according to the control signal of the controller. A low discharge due to high temperature can be reduced or prevented, and the number of power sources of the plasma display device can be reduced.

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract: A rotor reducing stress concentration generated by centrifugal force, the rotor having interference fit between a reinforcing ring and the external circumference of a rotor cylinder or rotor cylinder having a hole, wherein the rotor preliminarily rotates at high speed so that the rotor is plastic-deformed in advance, so that less plastic-deformation occurs even when the rotor rotates at high speed compared to the case where plastic deformation is not performed in advance.

Abstract: A TFT array substrate includes a gate line, a gate electrode, and a gate pad on a substrate, each of which including stacked layers of a first metal and a transparent conductive material, respectively, a pixel electrode formed of the transparent conductive material, a gate insulation layer on the substrate including the gate line and the gate electrode, the gate insulation layer having first and second open areas exposing the pixel electrode and the gate pad, a semiconductor layer formed on the gate insulation layer, a data line crossing the gate line to define a sub-pixel region, a source electrode diverging from the data line, a drain electrode spaced apart from the source electrode and connected to the pixel electrode, a data pad at an end of the data line; a masking layer covering the data line, the source electrode and the drain electrode, and an oxidation-prevention layer covering the gate pad and the data pad.

Abstract: A method of controlling a picture quality of a flat panel display for automatically analyzing a shape, a size, and brightness of a display stain of indeterminate shape having an irregular pattern, and compensating brightness of the display stain of indeterminate shape on the basis of the analyzed result is disclosed.