Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured.

Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.

Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Abstract: Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl esters, comprising the enantioselective enzyme reduction of a 1-aryl-2-tetrazolyl-ethyl ketone to form a (R)-1-aryl-2-tetrazolyl-ethyl alcohol and the carbamation of said alcohol.

Abstract: Disclosed is a method for the preparation of carbamic acid (R)-1-aryl-2-tetrazolyl-ethyl esters, comprising the enantioselective enzyme reduction of a 1-aryl-2-tetrazolyl-ethyl ketone to form a (R)-1-aryl-2-tetrazolyl-ethyl alcohol and the carbamation of said alcohol.

Abstract: Provided is a stretchable devices. The stretchable device includes a first stretchable substrate having a first wavy surface that wrinkles in a first direction; first wiring lines extending along the first wavy surface in the first direction; a second stretchable substrate having a second wavy surface that faces the first wavy surface and wrinkles in a second direction intersecting the first direction, wherein the second stretchable substrate is disposed on the first stretchable substrate; second wiring lines extending along the second wavy surface in the second direction; and interlayer insulating layers disposed on the intersections of the first wiring lines and the second wiring lines and disposed between the first wiring lines and the second wiring lines.

Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.

Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.

Abstract: Provided is a method of manufacturing a flexible substrate allowing an electronic device to be mounted thereto. The method of manufacturing a flexible substrate allowing an electronic device to be mountable thereto, includes preparing a substrate, applying a force to the substrate to stretch the substrate in horizontal direction, performing a surface treatment process on the substrate and forming a first region having a plurality of wavy surfaces, and forming an electrode on the first region.

Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.

Abstract: Provided are a stretchable electronic device and a method of manufacturing the same. The manufacturing method includes forming coil interconnection on a first substrate, forming a first stretchable insulating layer that covers the coil interconnection, forming a second substrate on the first stretchable insulating layer, separating the first substrate from the coiling interconnection and the first stretchable insulating layer, and forming a transistor on the coil interconnection.

Abstract: Provided is a method of manufacturing a gradually stretchable substrate. The method includes forming convex regions and concave regions on a top surface of a stretchable substrate by compressing a mold onto the stretchable substrate and forming non-stretchable patterns by filling the concave regions of the stretchable substrate. The stretchable substrate includes a stretchable region defined by the non-stretchable patterns, the non-stretchable patterns have side surfaces in contact with the stretchable region, and the side surfaces of the non-stretchable patterns are formed of protrusions and a non-protrusion between the protrusions repetitively connected to one another.

Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.

Abstract: Provided are a stretchable electric circuit and a manufacturing method thereof The method for manufacturing the stretchable electric circuit includes forming a mold substrate, forming a stretchable substrate having a first flat surface and a first corrugated surface outside the first flat surface on the mold substrate, removing the mold substrate, forming a corrugated wire on the first corrugated surface, and forming an electric device connected to the corrugated wire on the first flat surface.

Abstract: Provided is an electronic circuit. The electronic circuit includes: a substrate including a device region and a wiring region; an electronic device disposed on the device region; and a conductive wire disposed on the wiring region and connected to the electronic device, wherein the substrate has a first side where the electronic device and the conductive wire contact and a second side facing the first side; the first side and the second side of the wiring region have a convex structure; the first side of the device region is flat; and the device region is thicker than the wiring region.

Abstract: According to example embodiments of the inventive concept, provided is a transistor with a nano-layered oxide semiconductor layer. The oxide semiconductor layer may include at least one first nano layer and at least one second nano layer that are alternatingly stacked one on another. Here, the first nano layer and the second nano layer may include different materials from each other, and thus, a channel with high electron mobility may be formed at the interface between the first and second nano layers. Accordingly, the transistor can have high reliability.

Abstract: Disclosed are methods of forming a core-shell nano particle for a metal ink. The method includes forming a metal oxide nano particle core, and forming a metal shell on a surface of the metal oxide nano particle core to form a core-shell nano particle.

Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.

Abstract: Disclosed are a method for manufacturing a planarizing printed electronic device and a planarizing printed electronic device manufactured by using the same by simply implementing a large-area embedded printed electronic device by coupling a printing process such as inkjet printing and gravure printing and a transferring process using a laminating device and particularly, solving defects due to large surface roughness and a thickness of a printed layer included in the printed electronic device, when manufacturing an embedded printed electronic device where a printed layer is embedded in a substrate.

Abstract: Provided is a method of forming a fine pattern of a polymer thin film using a phenomenon that another material having a large difference in surface energy in comparison with a polymer thin film pattern is dewetted on the polymer thin film pattern. Two polymer materials having a large difference in surface energy can be applied to readily and conveniently form a fine pattern of a polymer thin film of micrometer or sub-micrometer grade.