Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Abstract: Provided is a method for manufacturing a glycol based compound. The method comprises agitating a mixture of a first glycol based compound, a hydrazide based compound, and a sulfonic acid based compound, and performing fractional distillation of resultant materials of the agitating to recover a second glycol based compound having a formaldehyde content of 0 ppm.

Abstract: The disclosure provides a cleaning agent composition for a flat panel display device, including: polyaminocarboxylic acid; alkali base; a nonionic surfactant; and a fluoride component. The cleaning agent composition for the flat panel display device can effectively remove metal oxides and organic contaminants on the substrate without impairing a transparent conductive layer.

Abstract: A composition for removing a photoresist pattern includes about 5 percent by weight to about 20 percent by weight of an aminoethoxy ethanol, about 2 percent by weight to about 10 percent by weight of a polyalkylene oxide, about 10 percent by weight to about 30 percent by weight of a glycol ether compound, and a remainder of an aprotic polar solvent including a nitrogen. Thus, the photoresist pattern can be easily removed from a substrate, thereby improving the removing ability of the composition. In addition, a residual amount of the photoresist pattern may be minimized, thereby improving the reliability of removing the photoresist pattern.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride.

Abstract: The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.

Abstract: The present invention relates to a nonaqueous stripper composition for negative chemically amplified resists which shows excellent removing capabilities, has anticorrosive effects on varieties of metallic substrate plates such as Al, W, TiN, WSi, SiON, SiNx, HTO, etc., improves productivity since it can be recycled as a nonaqueous stripper even after many applications, and is suitable in electronic material fields in which high precision processing is required in the negative chemically amplified resist removing process. The present invention provides a stripper composition for negative chemically amplified resists comprising a) 20 to 35 weight % of straight chained alkylbenzenesulfonic acid; b) 10 to 34 weight % of light aromatic naphtha solvent; c) 30 to 45 weight % of organic compounds containing chlorine; d) 15 to 25 weight % of hydroxybenzenes; and e) 0.5 to 5 weight % of polyoxyethylene octylphenylether derivatives, in order to accomplish the above objects.

Abstract: The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2-20 weight % of water-soluble hydroxylamine, 5-15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30-55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride.

Abstract: A composition for removing a copper-compatible resist includes about 10% to about 30% by weight of an amine compound, about 10% to about 80% by weight of a glycolether compound, and about 10% to about 80% by weight of a polar solvent.

Abstract: A photoresist remover composition including: 10 to 30% by weight amine compound; 20 to 60% by weight glycol series solvent; 20 to 60% by weight polar solvent; and 0.01 to 3% by weight perfluoroalkylethyleneoxide. The performance of the photoresist remover composition in stripping the photoresist residue, which is generated by dry or wet etching, ashing or ion implantation, from a substrate is enhance, and the photoresist remover composition is able to be smoothly applied over a variety of metal layers including an aluminum (Al) layer. Also, the photoresist remover composition corrodes the metal layers very little.

Abstract: The present invention relates to a resist stripper composition that is used to remove resists during semiconductor device manufacturing processes such as for large size integrated circuits, very large size integrated circuits, etc. The resist stripper composition comprises 3 to 10 wt % of an organic amine compound, 30 to 60 wt % of a solvent selected from a group consisting of DCMAc, DMF, DMI, NMP, etc., 30 to 60 wt % of water, 1 to 10 wt % of catechol, resorcin or a mixture thereof and 1 to 10 wt % of a C4-6 straight polyhydric alcohol.

Abstract: The present invention relates to a thinner composition for removing a spin-on-glass coating and a photoresist which are used in the semiconductor components manufacturing process. The present invention provides a mixed thinner composition which is mixed propylene glycol monoalkyl ether with monooxycarbonic acid ester, alkyl ethanoate, and alkyl lactate in a thinner composition for cleaning and photoresist removal applications in the semiconductor components manufacturing process. A thinner composition according to the present invention has the beneficial effects that the production yield can be improved during semiconductor component manufacturing since when the thinner composition is applied after the spin coating process, the undesired coating of the edge or the backside of the substrate can be removed promptly, completely, and effectively, and residual materials adhering to the surface of a substrate which must be reuse can be completely removed so that the substrate can be economically used.

Abstract: A photoresist remover composition used for removing photoresist during the manufacture of semiconductor devices such as integrated circuits (IC), large-scale integrated circuits (LSI) or very large scale integrated circuits (VLSI). The photoresist remover composition includes 10.about.40 wt % of water-soluble amine compound; 20.about.50 wt % of at least one water-soluble polar organic solvent selected from the group consisting of dimetylsulfoxide (DMSO), N-methylpyrrolidone (NMP), dimethylacetamide (DMAc), dimethylformamide (DMF) and dimethylimidezolidinone (DMI); 10.about.30 wt % of water; 0.1.about.10 wt % of organic phenol compound containing two or more hydroxy groups; 0.1.about.10 wt % of triazole compound; and 0.01.about.1 wt % of silicone surfactant.