Abstract: Provided is a compound of Formula 1: wherein: Cy1 and Cy2 are each independently a substituted or unsubstituted hetero ring; R1 to R5 are the same as or different from each other, and are each independently hydrogen, deuterium, a halogen group, a cyano group, a nitro group, a hydroxyl group, a carbonyl group, an ester group, an imide group, an amino group, a silyl group, a boron group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; n1 and n2 are each an integer from 0 to 4; n3 to n5 are each an integer from 0 to 3; and when n1 to n5 are each 2 or more, two or more substituents in the parenthesis are the same as or different from each other, and an organic light emitting device including the same.

Abstract: Disclosed is a cable adaptor comprising a first member which is conductive and comes into contact with a signal pin of the cable, a second member disposed outside the first member and coupled to the first member, a third member which is conductive and disposed outside the second member, and a contact pin fixed to the first member. Here, the first member includes a first body coupled to the second member and a first contact portion which extends from the first body and comes into contact with the signal pin. The third member includes a second body coupled to the second member and a second contact portion which extends from the second body and comes into contact with the outer conductor. A plurality of first contact points of the signal pin and the first contact portion are arranged at same intervals along a circumferential direction of the signal pin.

Abstract: Disclosed is a cable adaptor which is connected to a cable including an outer conductor. The adaptor includes a contact pin which comes into contact with a signal pin of the cable, a first member which is conductive and disposed inside and coupled to the contact pin, a second member disposed outside and coupled to the contact pin, and a third member which is conductive and disposed outside the second member. Here, the contact pin includes a first body coupled to the second member, a first contact portion which is conductive and extends from one side of the first body to come into contact with the signal pin, and a second contact portion which extends from the other side of the first body and comes into contact with an object being tested. The third member includes a second body coupled to the second member and a third contact portion.

Abstract: According to an embodiment of the present disclosure, a server for providing online threat data based on user-customized keywords includes: an online threat data collection unit that accesses a channel of a messenger program and collects channel- specific online threat data; an online threat database construction unit that analyzes the online threat data to extract a string, uses the string as an index to generate information for retrieving the online threat data, and stores the generated information in a channel- specific database; when the user-customized keywords and user identifiers are received from a user terminal through a user-customized keyword registration procedure, a user-customized keyword database construction unit that matches the user-customized keywords with the user identifiers and stores the matched user-customized keywords and user identifiers in a user-customized keyword database; and when the user terminal logs in using the user identifiers, an online threat data providing unit that extr

Abstract: A server for storing and managing online threat data according to an embodiment of the present disclosure includes: an online threat data collection unit that collects online threat data from an online threat data providing server, an online threat data analysis unit that analyzes the online threat data to extract an online threat string, and uses the online threat string as an index to generate information for retrieving the online threat data; and a database in which information generated by the online threat data analysis unit is stored.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench, forming a first conductive layer along sidewall surfaces and bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench, forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and being a bottom anti-reflective coating (BARC), and removing the first conductive layer using the mask pattern.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: An atomic layer etching apparatus using reactive radicals and neutral beams and an etching method using the same are provided.

Abstract: A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.

Abstract: A plasma generating apparatus and method using a neutral beam, capable of readily generating plasma at the same gas flow rate by changing the structure of an ion gun, without a separate ignition device, are provided. The apparatus includes a plasma generating part formed of a quartz cup, a radio frequency (RF) applying antenna disposed at the periphery of the plasma generating part, a cooling water supply part disposed at the periphery of the plasma generating part, and an igniter in direct communication with the plasma generating part, wherein a gas for generating plasma is supplied into the igniter, and the igniter has a higher local pressure than the plasma generating part at the same gas flow rate. The ion gun is also cheaper to manufacture since it does not require a separate power supply.