Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.

Abstract: Provided is a chemical vapor deposition apparatus. The apparatus includes a reaction chamber, a gas introduction unit, and a gas exhaust unit. The reaction chamber includes a susceptor on which a wafer is loaded and a reaction furnace in which the wafer is processed by chemical vapor deposition. The gas introduction unit is disposed at an outer wall of the reaction chamber to supply reaction gas from an outside of the reaction furnace to a center portion of the reaction furnace. The gas exhaust unit is disposed at a center portion of the reaction chamber to discharge the reaction gas to an upper or lower outside of the reaction chamber after the reaction gas is used for a reaction in the reaction furnace. Therefore, the gas density inside the chamber can be kept at a substantially uniform state even when process pressure is increased for growing a high-temperature deposition layer.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: Provided are a susceptor and a chemical vapor deposition (CVD) apparatus including the susceptor. The susceptor has a simple structure and is configured to prevent bending of a substrate for uniformly heating the substrate and maintain wavelength uniformity of an epitaxial layer formed on the substrate.

Abstract: There are provided a susceptor and a chemical vapor deposition apparatus including the same. The susceptor includes: at least one pocket accommodating a deposition object therein; a seating part stepped downward from a top end of the pocket, the seating part having the deposition object placed thereon; and a recess recessed from the seating part to a predetermined depth, wherein the recess has a radius of curvature ranging from substantially 8000 mm to 25000 mm.

Abstract: There is provided a chemical vapor deposition apparatus including: a chamber including a reactor where a deposition object is deposited; a first supplier including a plurality of gas pipes allowing a first gas to be jetted into the reactor in a substantially horizontal direction; a second supplier including a plurality of holes of a predetermined size having the gas pipes inserted therein, respectively; a supply flow path formed between each of the gas pipes and each of the holes, the supply flow path allowing a second gas to be supplied into the reactor in a substantially horizontal direction.

Abstract: A light emitting diode package including: a package substrate having a mounting area and first and second wiring structures partially exposed in the mounting area; a light emitting diode having first and second electrodes, the light emitting diode mounted on the mounting area of the package substrate to allow the first and second electrodes to be connected to first and second bonding pads, respectively; a transparent cover mounted above the mounting area of the package substrate to hermetically seal a mounting space in which the light emitting diode is mounted; and a transparent electric insulation fluid filled in the mounting space of the hermetically sealed light emitting diode and having a refractive index smaller than a refractive index of a material forming the light emitting diode.

Abstract: A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.