Abstract: An apparatus for manufacturing a semiconductor device according to the present invention includes a chamber having a gate valve and an outlet, a susceptor within the chamber to hold a wafer thereon, being movable upward and downward, and having a plurality of lift pin holes, wherein each lift pin hole has a hanging part at the upper end, and a plurality of lift pins passing through the plurality of lift pin holes, wherein each lift pin has a hung part at the upper end and a length of the lift pin being longer than that of the lift pin hole, and the upper diameter of the hung part is shorter than the upper diameter of the hanging part and is longer than the lower diameter of the hanging part.

Abstract: The apparatus for forming a thin film includes a reaction chamber having a top portion, a sidewall portion and a bottom portion; a gas injector penetrating the top portion and letting a source element pass therethrough; a distributor connected to the gas injector, wherein a plurality of injection holes are formed in the distributor and the source element is injected through the plurality of injection holes; and u substrate heating member positioned in a reaction space defined by the top, bottom and sidewall portions of the reaction chamber, and arranged below the distributor.