Patents by Inventor Sang-Gil Kim
Sang-Gil Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240155929Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Inventors: Myung Gil CHOI, Jung Min LEE, Dong Woo KIM, Sang Moo LEE
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Publication number: 20240126831Abstract: A depth-wise convolution acceleration device using an MAC array processor structure according to the present invention may include a data output unit, which receives a data of each row of the image from the data buffer and inputs the data into convolution operation blocks while shifting the data N?1 times according to the kernel size (N×N) and a weight output unit, which receives the kernel data from the kernel buffer and sequentially inputs a weight value constituting the kernel data to each of the row convolution operation blocks, and inputs the weight delaying by N clocks if the row increases as N rows.Type: ApplicationFiled: October 16, 2023Publication date: April 18, 2024Inventors: Hyo Seung LEE, Seen Suk KANG, Sang Gil CHOI, Seang Hoon KIM, Yong Wook KWON
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Publication number: 20240114778Abstract: The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the compound according to the present disclosure or by comprising a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties compared to the conventional organic electroluminescent devices.Type: ApplicationFiled: August 14, 2023Publication date: April 4, 2024Inventors: So-Young JUNG, Hyo-Nim SHIN, Seung-Hyun YOON, Hyun-Ju KANG, Ye-Jin JEON, Tae-Jun HAN, Mi-Ja LEE, Dong-Gil KIM, Sang-Hee CHO
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Patent number: 11937490Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.Type: GrantFiled: September 27, 2021Date of Patent: March 19, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Myung Gil Choi, Jung Min Lee, Dong Woo Kim, Sang Moo Lee
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Publication number: 20240081001Abstract: A display device includes a display panel having a folding axis extending in a first direction; and a panel supporter disposed on a surface of the display panel. The panel supporter includes a first layer including a first base resin and first fiber yarns extending in the first direction and dispersed in the first base resin, a second layer disposed on the first layer, the second layer including a second base resin and second fiber yarns extending in a second direction intersecting the first direction and dispersed in the second base resin, and a third layer disposed on the second layer, the third layer including a third base resin and third fiber yarns extending in the first direction and dispersed in the third base resin.Type: ApplicationFiled: May 1, 2023Publication date: March 7, 2024Applicant: Samsung Display Co., LTD.Inventors: Soh Ra HAN, Yong Hyuck LEE, Hong Kwan LEE, Hyun Jun CHO, Min Ji KIM, Sung Woo EO, Eun Gil CHOI, Sang Woo HAN
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Patent number: 11830908Abstract: An RF switch device and a method of manufacturing the same are proposed. A trap area is formed in or on a surface of a highly resistive substrate to trap carriers accumulating on the surface of the substrate, thus improving RF characteristics.Type: GrantFiled: January 5, 2022Date of Patent: November 28, 2023Assignee: DB HiTek, Co., Ltd.Inventors: Jin Hyo Jung, Hyun Jin Kim, Seung Ki Ko, Sang Gil Kim, Tae Ryoong Park, Ki Hun Lee, Kyong Rok Kim
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Patent number: 11817851Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device that reduces or eliminates a voltage imbalance by implementing at least one stage in a stacked switch device with a different width, and thus the voltage applied to each stage in the OFF state may be more equally distributed among the individual stages.Type: GrantFiled: May 11, 2022Date of Patent: November 14, 2023Assignee: DB HiTek, Co., Ltd.Inventor: Sang Gil Kim
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Publication number: 20230159127Abstract: The present invention allows a user to ride a bicycle while lying with his/her face down, thereby lowering the center of weight and improving the driving stability, increasing the velocity by reducing the air resistance during driving, and increasing the generation of thrust by easily transferring the force of the user to pedals, and comprises: a frame provided with a front wheel and a rear wheel such that the user can ride while lying with his/her face down; and an acceleration means installed on the rear wheel and generating power and acceleration according to pedaling.Type: ApplicationFiled: June 18, 2021Publication date: May 25, 2023Inventors: Min Ho Kim, Sang Gil Kim
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Publication number: 20230057074Abstract: An RF switch device and a method of manufacturing the same are proposed. A trap area is formed in or on a surface of a highly resistive substrate to trap carriers accumulating on the surface of the substrate, thus improving RF characteristics.Type: ApplicationFiled: January 5, 2022Publication date: February 23, 2023Inventors: Jin Hyo JUNG, Hyun Jin KIM, Seung Ki KO, Sang Gil KIM, Tae Ryoong PARK, Ki Hun LEE, Kyong Rok KIM
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Publication number: 20230040844Abstract: Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device and a method of manufacturing the same seeking to improve RF characteristics by forming a trap layer on a part of the surface of a substrate, thereby trapping carriers that may accumulate on the surface of the substrate.Type: ApplicationFiled: August 3, 2022Publication date: February 9, 2023Inventors: Ki Hun LEE, Jin Hyo JUNG, Kyong Rok KIM, Hyun Jin KIM, Sang Gil KIM, Seung Ki KO, Tae Ryoong PARK
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Publication number: 20220368322Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device that reduces or eliminates a voltage imbalance by implementing at least one stage in a stacked switch device with a different width, and thus the voltage applied to each stage in the OFF state may be more equally distributed among the individual stages.Type: ApplicationFiled: May 11, 2022Publication date: November 17, 2022Inventor: Sang Gil KIM
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Patent number: 11152354Abstract: A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.Type: GrantFiled: May 6, 2020Date of Patent: October 19, 2021Assignee: DB HiTek Co., Ltd.Inventors: Hyun-Jin Kim, Sang-Gil Kim, Seung-Hyun Eom, Yong-Jin Kim
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Patent number: 10867997Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: GrantFiled: March 25, 2020Date of Patent: December 15, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Changseop Yoon, Jayeol Goo, Sang Gil Kim
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Publication number: 20200357790Abstract: A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.Type: ApplicationFiled: May 6, 2020Publication date: November 12, 2020Inventors: Hyun-Jin KIM, Sang-Gil KIM, Seung-Hyun EOM, Yong-Jin KIM
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Publication number: 20200227410Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: ApplicationFiled: March 25, 2020Publication date: July 16, 2020Inventors: Changseop YOON, Jayeol GOO, Sang Gil KIM
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Patent number: 10643995Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: GrantFiled: April 10, 2019Date of Patent: May 5, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Changseop Yoon, Jayeol Goo, Sang Gil Kim
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Publication number: 20190237462Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: ApplicationFiled: April 10, 2019Publication date: August 1, 2019Inventors: Changseop YOON, Jayeol GOO, Sang Gil KIM
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Patent number: 10283502Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: GrantFiled: October 4, 2017Date of Patent: May 7, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Changseop Yoon, Jayeol Goo, Sang Gil Kim
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Publication number: 20180026032Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: ApplicationFiled: October 4, 2017Publication date: January 25, 2018Inventors: Changseop YOON, Jayeol GOO, Sang Gil KIM
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Publication number: 20160284697Abstract: A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.Type: ApplicationFiled: February 25, 2016Publication date: September 29, 2016Inventors: Changseop YOON, Jayeol GOO, Sang Gil KIM