Abstract: An ion implantation system for manufacturing semiconductor devices includes an ion generator, an ion extractor, an ion converter, an ion mass analyzer, an ion accelerator, an ion focusing device and an end station where a wafer is located and an ion beam is implanted, which are installed along the path of an ion beam. A first portion of the system, including the ion generator, ion extractor, ion converter, ion mass analyzer is arranged along a first horizontal layer. A remaining portion of the system is arranged along a second horizontal layer vertically removed from the first layer. As a result, floor space required for the ion implantation system is reduced, thereby lowering manufacturing costs.

Abstract: When employing conventional ion implantation equipment, the peripheral edge of the wafer is contaminated by metallic ions generated from the collision of the accelerated ion beam with the disk that supports the target, namely a wafer. The present invention provides a magnet for forming a magnetic field which will repel the generated metallic ions. The magnet is disposed on the disk and surrounds the wafer to prevent the metallic ions from impinging the wafer.

Abstract: An ion-implantation system for a semiconductor device manufacturing line is designed to save space within the manufacturing line by dividing the system into a first part located adjacent to the manufacturing line and a second part located in the manufacturing line. The first part includes an ion source, an ion-extractor, an ion-exchanger, an ion mass analyzer, an ion accelerator, and a charge exchange and acceleration chamber. The second part includes a charge filter, and an end station on which a wafer is mounted for ion-implantation along an ion beam path. The outlet of the charge exchange and acceleration chamber may also be included in the second part of the system, which is located in the manufacturing line, where semiconductor device manufacturing actually takes place. The first part of the system, which may include the inlet and body of the charge exchange and acceleration chamber, may be located below the manufacturing line.

Abstract: An exhaust system of an ion implanter that eliminates moisture in the process stream comprises: an exhaust pump positioned within the ion implanter; a main exhaust duct positioned outside the ion implanter; an exhaust line extending between the exhaust pump and the main exhaust duct; a gas introduction unit for introducing a moisture eliminating gas into the exhaust line; and a scrubber for removing a predetermined gas from the process stream. By introducing the moisture-eliminating gas (which is preferably heated nitrogen) into the process stream, moisture contained therein is removed from the stream, and the events described hereinabove that produce a corona discharge within the exhaust line are prevented.

Abstract: A Faraday cup assembly of a semiconductor ion-implanting apparatus is installed adjacent to a disc upon which a wafer can be mounted for performing an ion implantation. A micro-discharge is prevented because the Faraday cup has an inner wall covered by a conductive thin film or has a discharge tag of a predetermined size embedded in its inner wall. An ion implanting process utilizing such an apparatus ensures that contamination and quality inferiority of the wafer are prevented by preventing the build up of an insulating layer of carbon impurities on the inner wall of the Faraday cup assembly.

Abstract: An exhaust system for an ion implanter includes an exhaust pump for removing remaining gases in an inner portion of the ion implanter, an exhaust duct for carrying the remaining gases from the exhaust pump to the outside of the exhaust system, and a gas introducing portion for introducing heated gases from a gas storage tank to the exhaust duct. Therefore, by-products on an inside of the exhaust duct are heated by the gases, such that a reaction between the remaining gases from the exhaust pump and the heated by-products is prevented. With the exhaust system, a corona discharge is not generated inside the exhaust duct, thereby preventing the exhaust duct from being burned out.