Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

Abstract: Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region.

Abstract: The present invention relates to a composition for preparing solar cell electrodes including: a silver (Ag) powder; a glass frit containing about 0.1 mole % to about 50 mole % of elemental silver; and an organic vehicle, the composition introduces a glass frit including a silver cyanate or a silver nitrate to enhance contact efficiency between an electrode and a wafer, and solar cell electrodes prepared from the composition have minimized contact resistance (Rc) and serial resistance (Rs), thereby exhibiting excellent conversion efficiency.

Abstract: A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a glass frit containing about 0.1 mole % to about 50 mole % of elemental silver; and an organic vehicle, wherein the elemental silver derives from a silver halide (Ag—X). The composition introduces a glass frit including a silver halide to enhance contact efficiency between electrodes and a silicon wafer, and solar cell electrodes prepared from the composition have minimized contact resistance (Rc), specific contact resistivity, and serial resistance (Rs), thereby exhibiting excellent conversion efficiency.

Abstract: Example embodiments relate to a composition for forming a solar cell electrode, and a solar cell electrode prepared using the composition. The composition for forming a solar cell electrode includes a silver (Ag) powder, a glass frit, and an organic vehicle, wherein the glass frit includes silver (Ag); tellurium (Te); and at least one selected from the group of lithium (Li), sodium (Na), and potassium (K), a molar ratio of the silver (Ag): the tellurium (Te) included in the glass frit is in a range of about 1:0.1 to about 1:50, and a molar ratio of the silver (Ag) : lithium (Li), sodium (Na) or potassium (K) is in a range of about 1:0.01 to about 1:10. The solar cell electrode prepared using the composition has excellent fill factor and conversion efficiency due to minimized contact resistance (Rc) and series resistance (Rs).

Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

Abstract: A composition for solar cell electrodes and a solar cell electrode fabricated using the composition, the composition including a conductive powder; a glass frit; an organic vehicle; and a surface tension modifier, wherein the surface tension modifier has a surface tension of about 40 mN/m to about 65 mN/m, and the composition has a thixotropic index (TI) of about 3 to about 10 as represented by Equation 1: TI=(viscosity at 10 rpm/viscosity at 100 rpm),??[Equation 1] in Equation 1, the thixotropic index is calculated using viscosity values of the composition measured at 10 rpm and 100 rpm and at 23° C. with a No. 14 Spindle using a rotary viscometer.

Abstract: Disclosed is an organic light emitting diode display, including a first substrate including an organic light emitting diode and a driving circuit part for driving the light emitting diode, a second substrate facing the first substrate and covering the light emitting diode and the driving circuit part, a connection unit connected to the driving circuit part and extending from the first substrate along a rear side thereof, an electronic device disposed between the connection unit and the first substrate and transmitting a signal to the driving circuit part via the connection unit, and an electromagnetic wave-shielding sheet disposed on one side of the first substrate to directly face the electronic device and including a first conductive material layer, a buffer layer formed on one side of the first conductive material layer, and a first adhesive layer formed on the other side of the first conductive material layer.

Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: A composition for solar cell electrodes includes a silver (Ag) powder, a glass frit containing silver (Ag), tellurium (Te) and zinc (Zn), and an organic vehicle, wherein the glass frit has a mole ratio of Ag to Te ranging from about 1:0.1 to about 1:50 and a mole ratio of Ag to Zn ranging from about 1:0.1 to about 1:40.

Abstract: A composition for solar cell electrodes includes a silver (Ag) powder, a glass frit containing elemental silver (Ag) and at least one element of lead (Pb) and bismuth (Bi), and an organic vehicle. The glass frit has a mole ratio of Ag to Pb ranging from about 1:0.1 to about 1:50, or a mole ratio of Ag to Bi ranging from about 1:0.1 to about 1:20.

Abstract: Provided is a gate driver circuit. The gate driver circuit includes a plurality of sequentially connected stages, and each of stages includes an input unit including two input transistors forming diode connection, a pull-up unit including a pull-up transistor and a bootstrap capacitor, and first and second pull-down units each including two transistors. According to embodiments, an input capacitor is further included which is connected to a node between the input unit and the pull-up unit. In addition, a carry unit is further included which is connected to an output terminal and formed to transmit an output signal in a high state or a low state to a next stage.

Abstract: Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

Abstract: Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the power voltage to the second node according to a voltage level of the first node; and an output unit applying the input signal to an output terminal in response to the reference signal and applying the power voltage to the output terminal according to the voltage level of the first node, wherein the bootstrapping unit includes a capacitor between the first and second nodes, and when the input signal is shifted from a first voltage level to a second voltage level, the bootstrapping unit raises the voltage level of the first node to a level higher than the power voltage.

Abstract: Disclosed is a dual mode function pixel that operates either in a first mode or in a second mode according to the intensity of a projected light to have a high visibility regardless of the intensity of projected light. The dual mode function pixel includes: a first membrane on which a self-luminescent element is formed; one or more membranes formed to surround the first membrane; and a lower layer formed below the first membrane and the one or more membranes to be spaced apart from the first membrane and the one or more membranes. The dual mode function pixel is controlled such that the self-luminescent element is driven either to emit light in a first mode operation or to selectively reflect a projected light by utilizing an interference of light generated between the first to one or more membranes and the lower layer in a second mode operation.

Abstract: The present invention relates to a modified polynucleotide encoding aspartate kinase (EC:2.7.2.4; hereinafter, referred to as LysC), transketolase (EC:2.2.1.1; hereinafter, referred to as Tkt) or pyruvate carboxylase (EC:6.4.1.1; hereinafter, referred to as Pyc), in which the initiation codon is substituted with ATG, a vector including the same, a microorganism transformed with the vector, and a method for producing L-lysine using the same.

Abstract: Disclosed herein are a method and device for generating sound effects. Features of an input pattern are detected. A sound that reflects the input pattern is synthesized and played.

Abstract: Provided is a system and method for processing a touch input. The system includes: a touch screen configured to detect a touch on a touch screen panel; an outputter configured to output at least one of a vibration and a sound; a press sensor configured to detect user's pressing the touch screen panel by more than a predetermined strength; and a controller configured to, when the touch is detected where a user interface icon is displayed, control the outputter to output at least one of the vibration and the sound corresponding to the user interface icon, and, when a press on the touch screen panel is detected within a predetermined time after the touch is detected, perform a job corresponding to the user interface icon of location where the touch is detected.