Abstract: An optical network terminal with functions of detecting, recovering and blocking failures, and storing the information according to the present invention comprises: an uplink carrying out a function to communicate with a high level system; a communication port distributing or integrating the communication; a CPU managing distribution and integration of the communication; and a system power source for supplying power to the uplink, the communication port and the CPU, wherein the uplink comprises an optical module carrying out optical communication with the high level system; a MAC module controlling optical communication with the high level system; and a failure detection, recovery and blocking module for detecting optical output of the optical module, recovering failures and blocking optical output outside the MAC module. In accordance with the present invention, faster and specific failure solution can be provided using a low-cost microprocessor and its storage media.

Abstract: An optical network terminal with functions of detecting, recovering and blocking failures, and storing the information according to the present invention comprises: an uplink carrying out a function to communicate with a high level system; a communication port distributing or integrating the communication; a CPU managing distribution and integration of the communication; and a system power source for supplying power to the uplink, the communication port and the CPU, wherein the uplink comprises an optical module carrying out optical communication with the high level system; a MAC module controlling optical communication with the high level system; and a failure detection, recovery and blocking module for detecting optical output of the optical module, recovering failures and blocking optical output outside the MAC module. In accordance with the present invention, faster and specific failure solution can be provided using a low-cost microprocessor and its storage media.

Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

Abstract: The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.