Abstract: A method of manufacturing a vertical memory device includes forming a first sacrificial layer on a substrate, the first sacrificial layer including a first insulating material, forming a mold including an insulation layer and a second sacrificial layer alternately and repeatedly stacked on the first sacrificial layer, the insulation layer and the second sacrificial layer including second and third insulating materials, respectively, different from the first insulating material, forming a channel through the mold and the first sacrificial layer, forming an opening through the mold and the first sacrificial layer to expose an upper surface of the substrate, removing the first sacrificial layer through the opening to form a first gap, forming a channel connecting pattern to fill the first gap, and replacing the second sacrificial layer with a gate electrode.

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

Abstract: The present invention provides a suspension comprising aluminum hydroxide and magnesium hydroxide and a method of preparing the same. The aqueous suspension composition according to the present invention ensures an excellent sedimentation rate by using a mixed suspending agent with a specific composition, so that insoluble aluminum hydroxide and magnesium hydroxide do not easily settle, do not form a cake, and are easily redispersed. Since the aqueous suspension composition having an excellent sedimentation rate has not only physical stability, but also forms a homogeneous dispersion system, the reproducibility or effectiveness of bioavailability may be ensured. In addition, the aqueous suspension composition according to the present invention provides an excellent texture, and thus patient compliance increases.

Abstract: Disclosed are a method and an apparatus for transmitting and receiving a synchronization signal in a communication system. According to an exemplary embodiment of the present disclosure, a method of transmitting a first synchronization signal, performed by a base station in the communication system, may comprise generating a base sequence; generating a modified sequence by inverting polarity of the base sequence; mapping the base sequence and the modified sequence to a first frequency region having a frequency higher than a center subcarrier and a second frequency region having a frequency lower the center subcarrier, so that the base sequence and the modified sequence are symmetric centering the center subcarrier located at a center frequency of a frequency domain of the synchronization signal; and transmitting the synchronization signal comprising the base sequence and the modified sequence to a terminal. Therefore, performance of the communication system can be improved.

Abstract: Methods and systems for allocating cells of a sorting apparatus include associating, in a database, an identifier of the sorting apparatus with an identifier of a first container storing a first item of the purchase order, the purchase order including a second item stored in a second container; before associating the sorting apparatus with the second container, receiving an identifier of the first item; determining, in the database using the identifier of the first item, whether any cell of the sorting apparatus is associated with the purchase order; when no cell of the sorting apparatus is associated with the purchase order, associating, in the database, an identifier of a cell of the sorting apparatus with the identifier of the purchase order; and transmitting a first signal to a computer associated with a worker instructing placement of the first item in the cell.

Abstract: The present invention relates to a method for measuring radioactivity of radioactive waste, the method comprising an adsorption step (A) of selectively adsorbing a radioactive substance comprising at least one from among radioactive iodine and radioactive cesium from radioactive waste containing radioactive substances on an adsorption member for adsorbing a radioactive substance, and a measurement step (B) of measuring radioactivity of the radioactive substance.

Abstract: A display device includes: a substrate; and a transistor positioned on the substrate, wherein the transistor includes: a semiconductor layer; a gate electrode overlapping the semiconductor layer; a first gate contact overlapping layer overlapping a channel region where the gate electrode and the semiconductor layer are overlapped and in contact with the gate electrode; and a semiconductor contact overlapping layer overlapping the channel region and in contact with the semiconductor layer, and the first gate contact overlapping layer and the semiconductor contact overlapping layer are physically separated by a gap within the channel region.

Abstract: A precursor solution for thin-film deposition including a functional solvent selected from among liquid alkene and liquid alkyne capable of dissolving a metal halide at room temperature and a metal halide dissolved in the functional solvent and existing as a liquid at room temperature, thereby solving problems caused by halogen gas generated in a chamber during a deposition process and improving the uniformity of the thickness of a thin film.

Abstract: The systems and methods for receiving a user input for a combination of a plurality of object pointers, wherein the object pointers are associated with a corresponding plurality of items located within a first area; retrieving one or more system parameters comprising a current location and a current container; transmitting a request for the combination of the plurality of object pointers, the request comprising the one or more system parameters; receiving the combination of the plurality of object pointers in response to the request; displaying locations of the plurality of items relative to the current location; and processing the plurality of items until a threshold capacity of the current container is reached by receiving input data corresponding to the plurality of object pointers.

Abstract: A high-strength cold-rolled steel sheet and a hot-dipped galvanized steel sheet with low deviation of material properties and excellent formability, and a method for manufacturing same are provided. The present invention relates to a low-yield-ratio high-strength cold-rolled steel sheet with low deviation of directional material and excellent formability, comprising 0.05-0.15 wt % of C, 0.2-1.5 wt % of Si, 2.2-3.0 wt % of Mn, 0.001-0.10 wt % of P, 0.010 wt % or less of S, 0.01-0.10 wt % of sol.Al, 0.010 wt % or less of N, and the balance of Fe and impurities, satisfying Si/(Mn+Si)?0.5, wherein the microstructure of the steel sheet includes 40% or more of ferrite, 10% or less of bainite, 3% or less of residual austenite, and a balance of martensite, and the area fraction of a Mn band present in the martensite phase is 5% or less.

Abstract: A pixel circuit includes: a driving switching element; a data initializer to initialize a voltage of a control electrode of the driving switching element; a data writer to write a data voltage to the driving switching element; an organic light emitting element; an organic light emitting element initializer to initialize an anode electrode of the organic light emitting element to a second initialization voltage based on an organic light emitting element initialization gate signal; and a light emitting controller to control an emission of the organic light emitting element. The organic light emitting element initializer includes: a control electrode to receive the organic light emitting element initialization gate signal; an input electrode to receive the second initialization voltage; an output electrode connected to the anode electrode; and a conductive layer to receive a compensation control signal that is different from the organic light emitting element initialization gate signal.

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Abstract: Provided are a magnetic tunnel junction device and a method of fabricating the same. The magnetic tunnel junction device includes a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunnel insulating layer disposed on the free magnetic layer. The heavy metal layer includes platinum (Pt), the free magnetic layer includes cobalt (Co), a magnetization state of the free magnetic layer has an easy-cone state, the free magnetic layer has a positive first-order perpendicular magnetic anisotropy constant and a negative second-order perpendicular magnetic anisotropy constant, and the tunnel insulating layer includes magnesium oxide (MgO).

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: An electronic device for performing power management is provided. The electronic device includes a display; and a processor configured to in response to receiving an input for switching to a power management mode, control the display to display first guide data for determining whether to perform a power management operation, in response to receiving a first input for performing the power management operation, control the display to display second guide data related to one or more methods of the power management operation, and perform the power management operation based on a selection of at least one from among the one or more methods.

Abstract: An electronic device is provided and includes a first housing forming a portion of an outside surface of the electronic device, a second housing coupled with the first housing and forming another portion of the outside surface of the electronic device, an antenna formed in at least a portion of the second housing, a connector including one or more connection pins for connection with an external device, at least a portion of an outside surface of the connector being formed of a conductive member, an adjusting circuit electrically connected with, at least, the portion of the outside surface of the connector formed of the conductive member, wherein an impedance of the adjusting circuit is variable. The electronic device may further include a processor configured to vary the impedance of the adjusting circuit based on a signal to be output through the antenna, and output the signal through the antenna, with the impedance of the adjusting circuit being varied.

Abstract: Provided is an electronic apparatus and a method thereof. The method includes identifying pickup item information, identifying at least one storage place corresponding to the pickup item information among a plurality of storage places in the item storage center based on information on or regarding an item group located at each of the plurality of storage places, and providing information on the identified storage place and the pickup item information to a manager terminal, wherein the item group comprises at least one same item corresponding to an item group, and at least a portion of a plurality of item groups comprising a same item are stored in different storage places in the item storage center.

Abstract: An organic light emitting diode display includes: a substrate; an overlapping layer on the substrate; a pixel on the substrate and the overlapping layer; and a scan line, a data line, a driving voltage line, and an initialization voltage line that are connected to the pixel. The pixel includes: an organic light emitting diode; a second transistor connected to the scan line and the data line; a driving transistor including a gate electrode, an input terminal, and an output terminal, and to apply a current to the organic light emitting diode from the output terminal; and a voltage application transistor to apply a voltage to the overlapping layer. An output of the second transistor is connected to the input terminal of the driving transistor, and the overlapping layer is between the driving transistor and the substrate while overlapping with the driving transistor on a plane.

Abstract: The present invention provides an improved process for preparing an aminopyrimidine derivative or pharmaceutically acceptable salt thereof having a selective inhibitory activity against protein kinases, especially against the protein kinases for mutant epidermal growth factor receptors. Additional, the present invention provides novel intermediates useful for said process and processes for preparing the same.

Abstract: A method of fabricating a semiconductor device and a semiconductor processing apparatus are provided. The method of fabricating a semiconductor device comprises preparing a semiconductor substrate having a front side and a back side, opposing each other, and forming a material layer on the semiconductor substrate. The material layer is formed on at least a portion of the back side of the semiconductor substrate while being formed on the front side of the semiconductor substrate. The material layer formed on the at least a portion of the back side of the semiconductor substrate is removed, while the material layer formed on the front side of the semiconductor substrate remains. A semiconductor process is performed to fabricate the semiconductor device using the material layer remaining on the front side of the semiconductor substrate.