Patents by Inventor Sang Ho Lim

Sang Ho Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160099407
    Abstract: A multilayered magnetic thin-film stack including a tunneling barrier layer; a magnetic finned layer formed on a first surface of the tunneling barrier layer; and a magnetic free layer formed on a second surface of the tunneling barrier layer, which is opposite to the first surface, wherein at least one of the magnetic finned layer and the magnetic free layer includes a FeZr alloy layer and a first magnetic layer having a (001) bcc structure between the FeZr alloy layer and the tunneling barrier layer.
    Type: Application
    Filed: May 12, 2015
    Publication date: April 7, 2016
    Inventors: Sang Ho LIM, Tae Young LEE, Young Chan WON, Seong Rae LEE
  • Publication number: 20150115379
    Abstract: The present invention relates to a cobalt (Co) and platinum (Pt)-based multilayer thin film having a novel structure and perpendicular magnetic anisotropy, and to a fabrication method thereof. More specifically, the invention relates to a cobalt and platinum-based multilayer thin film having perpendicular magnetic anisotropy (PMA), which includes thin cobalt layers and thin platinum layers alternately deposited over a substrate, and has an inverted structure in which a thickness of the thin cobalt layers is greater than that of the thin platinum layers, and to a fabrication method thereof. The cobalt and platinum-based multilayer thin film has a new structure in which the thickness of a magnetic thin layer is greater than that of a non-magnetic thin layer. The multilayer thin film may be easily applied as a free layer and a pinned layer in a magnetic tunnel junction by controlling the perpendicular magnetic anisotropy energy depending on the thickness ratio of the layers.
    Type: Application
    Filed: June 26, 2012
    Publication date: April 30, 2015
    Applicant: SK hynix Inc.
    Inventors: Sang Ho Lim, Tae Young Lee, Seong Rae Lee, Dong-Su Son
  • Publication number: 20140222360
    Abstract: A method of extracting an Integrated Circuit (IC) current is provided. The method includes generating a transfer function value by using a voltage measured in a node nearest an input terminal of the IC, substituting the generated transfer function value for a reverse fast Fourier transform function, so as to extract the IC voltage, and extracting the IC current from the extracted IC voltage through a simulation in a time domain.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 7, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-Ho LIM, Sang-Ho LEE, Chea-Ok KO, Jong-Wan SHIM, Jeong-Nam CHEON
  • Publication number: 20120279160
    Abstract: An easily installable decoration tile is disclosed, whereby a plurality of tiles can be tightly and securely fastened by allowing the coupling lugs to be inserted into the coupling grooves, and allowing the rugged lugs to be inserted into the rugged grooves, to increase coupling force between tiles, to increase durability of the tiles after construction works are done, to dispense with use of adhesives and to free dwellers from being worried about hazards, and surfaces of coupling lugs and rugged lugs, and coupling grooves and rugged grooves formed on the distal end of the decoration tiles are coated with aerosol to form a coated layer to prevent the decoration tiles from being polluted with liquid foreign objects and to prevent the decoration tiles from being discolored and generating odor.
    Type: Application
    Filed: May 6, 2011
    Publication date: November 8, 2012
    Inventor: Sang Ho LIM
  • Patent number: 6946301
    Abstract: The invention relates to a fabrication method of Ge—Mn magnetic semiconductor with a high Curie temperature. To date, most of researches in magnetic semiconductor are constrained to the magnetic semiconductors from group II-VI and group III-V. However, a new range of semiconductors from group IV has been recently added. Especially, Ge based semiconductors are attracting a significant attention. These magnetic semiconductors have very low Curie temperatures whose maximum is around 116 K. The low Curie temperature is a major stumbling block for commercial development. The exact reason for the low Curie temperature is not known, however, this is probably due to the low content of Mn. In order to resolve this problem, the present invention utilizes the thermal evaporation method to fabricate amorphous Ge—Mn alloys. As a result, a large amount of Mn is made solid soluble in Ge without any precipitation. Also, a relatively high Curie temperature of 250 K is obtained.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: September 20, 2005
    Assignee: Korea Institute of Science and Technology
    Inventors: Sang Ho Lim, Sang Hoon Song
  • Publication number: 20040182307
    Abstract: The invention relates to a fabrication method of Ge—Mn magnetic semiconductor with a high Curie temperature. To date, most of researches in magnetic semiconductor are constrained to the magnetic semiconductors from group II-VI and group III-V.
    Type: Application
    Filed: October 17, 2003
    Publication date: September 23, 2004
    Inventors: Sang Ho Lim, Sang Hoon Song
  • Publication number: 20030208901
    Abstract: The present invention relates to the method of optimizing of planar type write heads for ultra high density magnetic recording. More particularly, the invention relates to a planar type write head for an ultra high density drive which can record information on a medium with high magneto-crystalline anisotropy.
    Type: Application
    Filed: September 12, 2002
    Publication date: November 13, 2003
    Inventors: Sang Ho Lim, Hi Jung Kim, Kyoung Suk Kim