Abstract: A substrate transfer apparatus includes: a chamber including a lower surface, an upper surface opposing the lower surface, and a side surface extending between the lower surface and the upper surface; and a fan filter unit disposed on the upper surface of the chamber and configured to introduce air into the chamber. The chamber includes an inclined surface extending from the upper surface to the side surface and positioned to a side of the fan filter unit.

Abstract: A substrate transfer apparatus includes: a chamber including a lower surface, an upper surface opposing the lower surface, and a side surface extending between the lower surface and the upper surface; and a fan filter unit disposed on the upper surface of the chamber and configured to introduce air into the chamber. The chamber includes an inclined surface extending from the upper surface to the side surface and positioned to a side of the fan filter unit.

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Abstract: Semiconductor devices including empty spaces and methods of forming the semiconductor devices are provided. The semiconductor devices may include first and second line structures extending in a direction on a substrate, an insulating isolation pattern between the first and second line structures and a conductive structure between the first and second line structures and next to the insulating isolation pattern along the direction. The semiconductor devices may also include an empty space including a first portion between the first line structure and the conductive structure and a second portion between the first line structure and the insulating isolation pattern. The first portion of the empty space may have a height different from a height of the second portion of the empty space.

Abstract: The present invention provides a method for producing cloned cows by employing in vitro maturation of oocytes and nuclear transfer techniques. The method comprises collecting donor somatic cell lines from cows; maturing oocytes extracted from an ovary in vitro; enucleating the oocyte by cutting a portion of the zona pellucida and squeezing out a portion of the cytoplasm, including the first polar body; inserting the donor somatic cell into the oocyte; electrofusing the cells to produce embryos; post-activating the embryos; transferring them into surrogate cows to produce cloned calves.