Abstract: The present disclosure relates to: a surface acoustic wave filter comprising: a substrate on which a support substrate, an energy confinement layer, and a piezoelectric layer are sequentially stacked; a first bus bar and a second bus bar each extending on the substrate in a first direction and spaced apart from each other in a second direction perpendicular to the first direction; a plurality of first interdigital transducer (IDT) electrodes and a plurality of second IDT electrodes alternately disposed to extend from the first and second bus bars in the second direction and spaced apart from each other in the first direction; a second dummy electrode extending from the second bus bar to face an end portion of each of the plurality of first IDT electrodes extending from the first bus bar; and a first dummy electrode extending from the first bus bar to face an end portion of each of the plurality of second IDT electrodes extending from the second bus bar, wherein an acoustic velocity at the first and second dum

Abstract: Provided are a surface acoustic wave device including IDT electrodes having an oxide electrode layer formed therein, and a method for fabricating the same. The surface acoustic wave device include a piezoelectric substrate and a plurality of IDT electrodes formed on the piezoelectric substrate, wherein each of the plurality of IDT electrodes includes: a main electrode layer formed on the upper surface of the piezoelectric substrate; an upper electrode layer formed on the main electrode layer; and an oxide electrode layer formed on the upper surface of the upper electrode layer by oxidation of the upper electrode layer, and wherein the thickness (te) of each of the plurality of IDT electrodes satisfies 0.011?to/te?0.333 with respect to the thickness (to) of the oxide electrode layer.

Abstract: Provided are a SAW resonator having an electrode structure with improved performance and a method of manufacturing the same. The SAW resonator includes a piezoelectric substrate; and a plurality of IDT electrodes formed on the piezoelectric substrate, wherein each of the plurality of IDT electrodes includes: a seed layer stacked on a surface of the piezoelectric material; and a main electrode layer formed on the seed layer, and an amorphous layer is formed on a top surface of the piezoelectric substrate.

Abstract: A surface acoustic wave device includes a substrate, a first electrode and a second electrode formed on the substrate to extend along a first direction, wherein the first electrode and the second electrode are alternately disposed along the second direction, one end of the first electrode on one side of the first direction is aligned along the second direction, and one end of the second electrode on the other side of the first direction is aligned along the second direction, a temperature compensation film which covers the first electrode and the second electrode, a first additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the first electrode on the one side of the first direction, and a second additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the second electrode.

Abstract: A surface acoustic wave device includes a substrate, a first electrode and a second electrode formed on the substrate to extend along a first direction, wherein the first electrode and the second electrode are alternately disposed along the second direction, one end of the first electrode on one side of the first direction is aligned along the second direction, and one end of the second electrode on the other side of the first direction is aligned along the second direction, a temperature compensation film which covers the first electrode and the second electrode, a first additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the first electrode on the one side of the first direction, and a second additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the second electrode.

Abstract: A surface acoustic wave device includes: a substrate; an electrode disposed on the substrate in a first direction; a dummy bar disposed to be spaced apart from the electrode by a predetermined distance in the first direction; and an additional film formed on the dummy bar, wherein the electrode and the dummy bar are disposed in plurality in parallel in a second direction perpendicular to the first direction, and the dummy bars are alternately disposed on a left side or a right side of the electrode to be spaced apart from the electrode by the predetermined distance, and the additional film is formed on the predetermined distance between the electrode and the dummy bar and on the plurality of dummy bars.