Abstract: A display apparatus includes a first substrate including a plurality of pixels, a second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. Each pixel includes a gate electrode, a gate insulating layer, a semiconductor pattern, a source electrode, a drain electrode, a first electrode, and a second electrode. The first electrode includes a first portion overlapping the drain electrode and a second portion outside the first portion, and the second electrode does not overlap the first portion of the first electrode. The first electrode or the second electrode is formed as a single unitary structure.

Abstract: The present invention relates to a thin film transistor array panel and a manufacturing method thereof, and a thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a first conductive layer disposed on the substrate; a second conductive layer overlapping at least a portion of the edge of the first conductive layer on the first conductive layer and including a first portion overlapping the first conductive layer and a second portion not overlapping the first conductive layer; a first insulating layer disposed on the second conductive layer and having a contact hole exposing at least a portion of a boundary between the first portion and the second portion; and a third conductive layer disposed on the first insulating layer and simultaneously contacting the first portion and the second portion that are exposed through the contact hole.

Abstract: The application discloses embodiments of methods and/or systems for compensating a transmission carrier leakage of an up-conversion mixer, a tranceiving circuit or apparatus embodying the same. One embodiment of a method can include detecting an I channel DC offset DCI0 and a Q channel DC offset DCQ0 generated by a reception carrier leakage from an output of a down-conversion mixer, detecting an I channel DC offset DCI and a Q channel DC offset DCQ from the output of the down-conversion mixer while varying a compensation parameter being inputted to an up-conversion mixer that has its output coupled to an input of the down-conversion mixer to determine the compensation parameter that can reduce or minimize a transmission carrier leakage. A combination of a transmission baseband signal and the determined compensation parameter can be transmitted using the up-conversion mixer and an antenna to compensate for the transmission carrier leakage.

Abstract: A high-voltage semiconductor device capable of preventing a substrate current from forming is disclosed. The method of manufacturing the high-voltage semiconductor device comprises forming a well in a semiconductor substrate, forming a device isolation film in a portion of the semiconductor substrate, forming a series of drift regions below the surface of the semiconductor substrate, forming a gate electrode on the surface of the semiconductor substrate so as to overlap a portion of at least one drift region, and forming a source and a drain region below the surface of the semiconductor substrate drift regions formed on opposing sides of the gate electrode. Advantageously, the substrate current of the semiconductor device is reduced and the operational withstand voltage is increased, improving the characteristics of the high-voltage transistor.

Abstract: The application discloses embodiments of methods and/or systems for compensating a transmission carrier leakage of an up-conversion mixer, a tranceiving circuit or apparatus embodying the same. One embodiment of a method can include detecting an I channel DC offset DCI0 and a Q channel DC offset DCQ0 generated by a reception carrier leakage from an output of a down-conversion mixer, detecting an I channel DC offset DCI and a Q channel DC offset DCQ from the output of the down-conversion mixer while varying a compensation parameter being inputted to an up-conversion mixer that has its output coupled to an input of the down-conversion mixer to determine the compensation parameter that can reduce or minimize a transmission carrier leakage. A combination of a transmission baseband signal and the determined compensation parameter can be transmitted using the up-conversion mixer and an antenna to compensate for the transmission carrier leakage.

Abstract: The present invention relates to a novel arylsulfonylimidazolone derivative represented by the following formula (I) which shows a superior antineoplastic activity in contrast to the known sulfonylurea antitumor agents as well as little side effect: ##STR1## and its pharmaceutically acceptable salt and stereoisomer, in which - -, R.sub.1, and R.sub.2 are as defined in the specification.

Abstract: The present invention relates to a novel arylsulfonylimidazolone derivative represented by the following formula (I) which shows a superior antineoplastic activity in contrast to the known sulfonylurea antitumor agents as well as little side effect: ##STR1## and its pharmaceutically acceptable salt and stereoisomer, in which ----, R.sub.1, and R.sub.2 are as defined in the specification.