Abstract: A method of predicting a substrate current in a high voltage device that may accurately predict substrate current components in each of a first region, a second region, and a third region. This may be accomplished by modeling a substrate current component in a third region, in which an inconsistency may occur when a substrate current in a high voltage device is calculated, for example using BSIM3-based modeling. According to embodiments, a substrate current for a third region may be modeled by an expression with a ternary operator, and the modeled substrate current may be added to a substrate current obtained through BSIM3-based modeling.

Abstract: A method for calculating a capacitance of a high voltage depletion capacitor is disclosed. The method includes measuring capacitance values of a high voltage depletion capacitor according to an applied voltage, storing measured capacitance values in a data storage device, setting a polynomial-type mathematical model including a plurality of parameters based on the measured capacitance values, calculating parameter coefficients using the measured capacitance values and the polynomial-type mathematical model, and calculating the capacitance of the high voltage depletion capacitor using the polynomial-type mathematical model and the calculated parameter coefficients.

Abstract: Embodiments relate to a method for measuring a threshold voltage of a flash device including inputting a voltage and a pulse width. The dependence of threshold voltage on the applied voltages and the pulse width may be determined by using a threshold voltage measuring equation, and equations regarding a plurality of device variables included within the threshold voltage measuring equation.

Abstract: A method is provided, which can improve the efficiency of device design by estimating the variation of threshold voltage according to the pulse widths of applied voltage for a semiconductor device in mass product.

Abstract: A method of predicting a substrate current in a high voltage device that may accurately predict substrate current components in each of a first region, a second region, and a third region. This may be accomplished by modeling a substrate current component in a third region, in which an inconsistency may occur when a substrate current in a high voltage device is calculated, for example using BSIM3-based modeling. According to embodiments, a substrate current for a third region may be modeled by an expression with a ternary operator, and the modeled substrate current may be added to a substrate current obtained through BSIM3-based modeling.

Abstract: A modeling method for evaluating a unit delay time of an inverter and an apparatus thereof are disclosed. The present modeling method includes deriving a model for a plurality of inverters, including a channel length, a channel width and a gate electrode resistance as variables in the model; measuring a delay time by inputting variations in the variables; and determining a unit delay time for one inverter by dividing the delay time by the number of inverters.

Abstract: Embodiments relate to a method for measuring a threshold voltage of a flash device including inputting a voltage and a pulse width. The dependence of threshold voltage on the applied voltages and the pulse width may be determined by using a threshold voltage measuring equation, and equations regarding a plurality of device variables included within the threshold voltage measuring equation.

Abstract: A method is provided, which can improve the efficiency of device design by estimating the variation of threshold voltage according to the pulse widths of applied voltage for a semiconductor device in mass product.

Abstract: A system and method for simulating a diode device measures electrical characteristics of a plurality of diodes; normalizes the measured electrical characteristics of the diode; extracts a plurality of device parameters of each of the diodes from the normalized characteristics; converts the device parameters of each of the diodes to values per unit area; obtains a linear equation from the converted device parameters; and predicts electrical characteristics of certain diode area from the linear equation and the device parameters. The linear equation is obtained by a least square method of the regression analysis to extract the device parameters of each of the diodes which are converted to value per unit area. The device parameters are obtained by a simultaneous equation which is derived from both a diode having larger area component and a diode having greater length component.