Abstract: This invention relates to a method of producing aromatics and light paraffins from hydrocarbonaceous oils derived from oil, coal or wood, including partially saturating and hydrocracking the oils derived from oil in a hydrogenation and reaction area, separating them depending on the number of carbons, recirculating heavy oils having 11 or more carbons to the hydrogenation and reaction area, feeding oils suitable for producing BTX to an aromatic separation process and a transalkylation process to recover aromatics, and feeding hydrocarbonaceous components having 5 or fewer carbons to a light separation process, thus obtaining light paraffins.

Abstract: The present invention relates to a method for manufacturing aromatic products (benzene/toluene/xylene) and olefinic products from an aromatic-compound-containing oil fraction, whereby it is possible to substitute naphtha as a feedstock for aromatic production and so make stable supply and demand, and it is possible to substantially increase the yield of high-added-value olefinic and high-added-value aromatic components, by providing a method for manufacturing olefinic and aromatic products from light cycle oil comprising a hydrogen-processing reaction step, a catalytic cracking step, an separation step and a transalkylation step, and optionally also comprising a recirculation step.

Abstract: This invention relates to a hydrocracking catalyst for preparing valuable light aromatic hydrocarbons from polycyclic aromatic hydrocarbons derived from oil, which includes (i) beta-zeolite, (ii) pseudo-boehmite, and (iii) one or more metals selected from among metals of Groups VIII and VIB, and which further includes a cocatalyst component, thereby producing a maximum amount of BTX (Benzene, Toluene, Xylene) from LCO (Light Cycle Oil).

Abstract: This invention relates to a method of producing aromatics and olefins from oils derived from coal or wood, including partially saturating and cracking the oils derived from coal or wood in a hydrogenation & reaction area, separating them depending on the number of carbons, recirculating heavy oils having 11 or more carbons to the hydrogenation & reaction area, feeding oils suitable for producing BTX to an aromatic separation process and a transalkylation process to recover aromatics, and feeding hydrocarbonaceous components having 5 or less carbons to a light separation process, thus obtaining olefins.

Abstract: An organic light-emitting display apparatus includes a substrate, a first electrode on the substrate; an intermediate layer on the first electrode, the intermediate layer including an organic light-emitting layer; a second electrode on the intermediate layer, a first inorganic encapsulating layer on the second electrode, the first inorganic encapsulating layer defining a first groove formed therein; a first organic encapsulating layer that is in the first groove defined by the first inorganic encapsulating layer, the first organic encapsulating layer not extending beyond the first groove, and a second inorganic encapsulating layer on the first organic encapsulating layer.

Abstract: A method of fabricating an organic light emitting diode (OLED) display is provided. According to the method, a first electrode overlaps a scan line, a common power supply line and/or a data line. A pixel defining layer (PDL) is etched by backside exposure so that an aperture ratio of the OLED may be enhanced.

Abstract: The present invention relates to a method of producing aromatic products (benzene/toluene/xylene) and olefin products from petroleum fractions obtained by fluid catalytic cracking, and, more particularly, to a method of producing products comprising high-concentration aromatic products and high value-added light olefin products from light cycle oil obtained by fluid catalytic cracking.

Abstract: A method of fabricating an organic light emitting diode (OLED) display is provided. According to the method, a first electrode overlaps a scan line, a common power supply line and/or a data line. A pixel defining layer (PDL) is etched by backside exposure so that an aperture ratio of the OLED may be enhanced.

Abstract: A method of fabricating an organic light emitting diode (OLED) display is provided. According to the method, a first electrode overlaps a scan line, a common power supply line and/or a data line. A pixel defining layer (PDL) is etched by backside exposure so that an aperture ratio of the OLED may be enhanced.

Abstract: A thin film transistor (TFT) having a lightly doped drain (LDD) structure includes a lightly doped drain (LDD) region formation pattern, an active layer formed in an uneven structure on the LDD region formation pattern, and having a source region and a drain region having an LDD region. A gate electrode may be formed on a gate insulating layer, and source and drain electrodes are coupled to the source and drain regions.

Abstract: An organic light emitting display device (OLED) and a method of fabricating the same are disclosed. The organic light emitting display (OLED) device includes: a first substrate having a pixel region and a non-pixel region; an inorganic insulating layer disposed over the first substrate; a planarization layer disposed over the inorganic insulating layer; a second substrate placed over the first substrate; and a sealant connecting to the second substrate and contacting the inorganic insulating layer through a portion of the planarization layer located in the non-pixel region. This configuration improves the adhesion of a sealant, thus reducing damages to an organic light emitting diode in the OLED.

Abstract: Provided are an organic light emitting display (OLED) and a method of fabricating the same capable of improving product reliability by forming an auxiliary electrode line to be in contact with a second electrode power supply line to remove an organic layer on the auxiliary electrode line and minimize the organic layer on a pixel region, thereby preventing pixel shrinkage resulting from degradation of an organic emission layer caused by out-gassing from the organic layer.

Abstract: An organic electroluminescence display device and a method of manufacturing the same, configured to prevent IR drop of a second electrode by forming an auxiliary electrode line in an organic electroluminescence display device, are disclosed. The display device is also configured to prevent pixel shrinkage caused by deterioration of an organic electroluminescent layer due to transfer of gases into the organic electroluminescent layer. The out-gassing is prevented by providing a plurality of patterns and/or trenches in the auxiliary electrode line to reduce the contact area between the auxiliary electrode line and the second electrode, thereby lowering heat resistance and optimizing heat transfer during a curing process, and also allowing for removal of remaining gases in an organic film.

Abstract: An organic electroluminescence display device including a thin film transistor, a first electrode layer, a second electrode layer, and an organic layer. The thin film transistor includes a semiconductor layer, a gate electrode disposed over the semiconductor layer, and source and drain electrodes insulated from the gate electrode. The first electrode layer is coupled to either the source electrode or the drain electrode, and the first electrode layer and the gate electrode are disposed on the same layer. The second electrode layer is disposed above the first electrode layer, and an organic layer, which includes at least a light emitting layer, is interposed between the first electrode layer and the second electrode layer.

Abstract: Disclosed is a flat display device which prevents electrode disconnection due to step differences between regions of a display panel. The flat display device includes: a substrate; a plurality of thin film transistors being located in a first region of the substrate; a wire unit located on the substrate and separated from the first region; a conductive layer located on the substrate between the first region and the wire unit; and a plurality of display elements electrically connected to the thin film transistors in the first region.

Abstract: In a disclosed method for manufacturing a semiconductor device, a lower insulating layer, a lower metal line and an upper insulating layer are sequentially stacked. A first photosensitive film is patterned on the upper insulating layer and the upper insulating layer is subsequently etched. The photosensitive film is removed. An etched portion of the upper insulating layer is then filled with a nitride film. The upper insulating layer is then removed. A second photosensitive film is then patterned and the lower metal line is subsequently etched. An IMD layer is deposited over the resultant construct, thereby forming an air gap within the IMD layer. The IMD layer is planarized. The nitride film is then etched away to thereby form a hole in the IMD layer. The hole is filled with a conductive material to form a contact plug. An upper metal line is deposited over the resultant construct.

Abstract: A thin film transistor (TFT) having a lightly doped drain (LDD) structure includes a lightly doped drain (LDD) region formation pattern, an active layer formed in an uneven structure on the LDD region formation pattern, and having a source region and a drain region having an LDD region. A gate electrode may be formed on a gate insulating layer, and source and drain electrodes are coupled to the source and drain regions.

Abstract: A thin film transistor (TFT) having a lightly doped drain (LDD) structure includes a lightly doped drain (LDD) region formation pattern, an active layer formed in an uneven structure on the LDD region formation pattern, and having a source region and a drain region having an LDD region. A gate electrode may be formed on a gate insulating layer, and source and drain electrodes are coupled to the source and drain regions.

Abstract: Disclosed is a flat display device which prevents electrode disconnection due to step differences between regions of a display panel. The flat display device includes: a substrate; a plurality of thin film transistors being located in a first region of the substrate; a wire unit located on the substrate and separated from the first region; a conductive layer located on the substrate between the first region and the wire unit; and a plurality of display elements electrically connected to the thin film transistors in the first region.

Abstract: A method for fabricating a split gate flash memory includes depositing a second conductive layer for forming a control gate on a semiconductor substrate having a first conductive layer, an insulating layer, and an oxide layer on both sides of the first conductive layer formed thereon, filling an anti-implant protective layer in a depression of the second conductive layer, performing ion implant on the second conductive layer, removing the anti-implant protective layer filled in the depression of the second conductive layer, forming a photoresist pattern by depositing a photoresist layer on the second conductive layer for forming a control gate, and treating the photoresist layer with a light exposure and a development process, and forming the control gate by etching the second conductive layer.